Applied Materials, Inc.

Massachusetts Institute of Technology

Leland Stanford Junior University

Jason T Bloking

Young Seen Lee

Anchuan Wang

Yet-Ming Chiang

Sung-Yoon Chung

Anna M Andersson

Ellie Y Yieh

Hemant P Mungekar

Manoj Vellaikal

Jin Ho Jeon

Srinivas D Nemani

Qiwei Liang

Canfeng Lai

Xiaolin C Chen

Siqing Lu

Xu Han

Michael David McGehee

Steven H Kim

Robert Chen

Lung-Tien Han

Irene Chou

Alan Sellinger

Improved electron acceptor materials for organic photovoltaic (OPV) cells are provided. More specifically, electron acceptor materials for OPVs can include vinylimide, vinylthioimide, alkynylimide and/or alkynylthioimide moieties. Experimental work with members of this class of material has demonstrated record solar cell power conversion efficiency (3.36%) for non-fullerene acceptors.

Electron deficient molecules and their use in organic electronic applications

A compound comprising a composition A(M'M&#x2033;)(XD), A(M&#x2032;M&#x2033;)(DXD), or A(M&#x2032;M&#x2033;)(XD), (AM&#x2033;)M&#x2032;(XD), (AM&#x2033;)M&#x2032;(DXD), or (AM&#x2033;)M&#x2032;(XD). In the compound, A is at least one of an alkali metal and hydrogen, M&#x2032; is a first-row transition metal, X is at least one of phosphorus, sulfur, arsenic, molybdenum, and tungsten, M&#x2033; any of a Group IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB, IVB, VB, and VIB metal, D is at least one of oxygen, nitrogen, carbon, or a halogen, 0.0001&#x3c;a&#x2266;0.1, and x, y, and z are greater than zero. The compound can be used in an electrochemical device including electrodes and storage batteries.

Conductive lithium storage electrode

A compound comprising a composition A(M'M&#x2033;)(XD), A(M&#x2032;M&#x2033;)(DXD), or A(M&#x2032;M&#x2033;)(XD), and have values such that x, plus y(1&#x2212;a) times a formal valence or valences of M&#x2032;, plus ya times a formal valence or valence of M&#x2033;, is equal to z times a formal valence of the XD, XD, or DXDgroup; or a compound comprising a composition (AM&#x2033;)M&#x2032;(XD), (AM&#x2033;)M&#x2032;(DXD)(AM&#x2033;)M&#x2032;(XD)and have values such that (1&#x2212;a)plus the quantity ax times the formal valence or valences of M&#x2033; plus y times the formal valence or valences of M&#x2032; is equal to z times the formal valence of the XD, XDor DXDgroup. In the compound, A is at least one of an alkali metal and hydrogen, M&#x2032; is a first-row transition metal, X is at least one of phosphorus, sulfur, arsenic, molybdenum, and tungsten, M&#x2033; any of a Group IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB, IVB, VB, and VIB metal, D is at least one of oxygen, nitrogen, carbon, or a halogen, 0.0001&#x3c;a&#x2266;0.1, and x, y, and z are greater than zero. The compound can have a conductivity at 27&#xb0; C. of at least about 10S/cm. The compound can be a doped lithium phosphate that can intercalate lithium or hydrogen. The compound can be used in an electrochemical device including electrodes and storage batteries and can have a gravimetric capacity of at least about 80 mAh/g while being charged/discharged at greater than about C rate of the compound.

A processing chamber is seasoned by providing a flow of season precursors to the processing chamber. A high-density plasma is formed from the season precursors by applying at least 7500 W of source power distributed with greater than 70% of the source power at a top of the processing chamber. A season layer having a thickness of at least 5000 &#x212b; is deposited at one point using the high-density plasma. Each of multiple substrates is transferred sequentially into the processing chamber to perform a process that includes etching. The processing chamber is cleaned between sequential transfers of the substrates.

Reduction of etch-rate drift in HDP processes

Methods are disclosed of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A first portion of the silicon oxide film is deposited over the substrate and within the gap using a high-density plasma process. Thereafter, a portion of the deposited first portion of the silicon oxide film is etched back. This includes flowing a halogen precursor through a first conduit from a halogen-precursor source to the substrate processing chamber, forming a high-density plasma from the halogen precursor, and terminating flowing the halogen precursor after the portion has been etched back. Thereafter, a halogen scavenger is flowed to the substrate processing chamber to react with residual halogen in the substrate processing chamber. Thereafter, a second portion of the silicon oxide film is deposited over the first portion of the silicon oxide film and within the gap using a high-density plasma process.

Impurity control in HDP-CVD DEP/ETCH/DEP processes

A substrate processing system has a housing that defines a process chamber, a gas-delivery system, a high-density plasma generating system, a substrate holder, and a controller. The housing includes a sidewall and a dome positioned above the sidewall. The dome has physically separated and noncontiguous pieces. The gas-delivery system introduces e a gas into the process chamber through side nozzles positioned between two of the physically separated and noncontiguous pieces of the dome. The high-density plasma generating system is operatively coupled with the process chamber. The substrate holder is disposed within the process chamber and supports a substrate during substrate processing. The controller controls the gas-delivery system and the high-density plasma generating system.

Two-piece dome with separate RF coils for inductively coupled plasma reactors

A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 10ions/cmis formed from the process gas. The silicon oxide film is deposited over the substrate with a halogen concentration less than 1.0%. The silicon oxide film is deposited with the plasma using a process that has simultaneous deposition and sputtering components. The flow rate of the halogen source to the process chamber to the flow rate of the silicon source to the process chamber is substantially between 0.5 and 3.0.

Integrated process modulation (IPM) a novel solution for gapfill with HDP-CVD

A compound comprising a composition A(M'M&#x2033;)(XD), A(M&#x2032;M&#x2033;)(DXD), or A(M&#x2032;M&#x2033;)(XD), and have values such that x, plus y(1-a) times a formal valence or valences of M&#x2032;, plus ya times a formal valence or valence of M&#x2033;, is equal to z times a formal valence of the XD, XD, or DXDgroup; or a compound comprising a composition (AM&#x2033;)M&#x2032;(XD), (AM&#x2033;)M&#x2032;(DXD)(AM&#x2033;)M&#x2032;(XD)and have values such that (1-a)plus the quantity ax times the formal valence or valences of M&#x2033; plus y times the formal valence or valences of M&#x2032; is equal to z times the formal valence of the XD, XDor DXDgroup. In the compound, A is at least one of an alkali metal and hydrogen, M&#x2032; is a first-row transition metal, X is at least one of phosphorus, sulfur, arsenic, molybdenum, and tungsten, M&#x2033; any of a Group IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB, IVB, VB, and VIB metal, D is at least one of oxygen, nitrogen, carbon, or a halogen, 0.0001&#x3c;a&#x2266;0.1, and x, y, and z are greater than zero. The compound can have a conductivity at 27&#xb0; C. of at least about 10S/cm. The compound can be a doped lithium phosphate that can intercalate lithium or hydrogen. The compound can be used in an electrochemical device including electrodes and storage batteries and can have a gravimetric capacity of at least about 80 mAh/g while being charged/discharged at greater than about C rate of the compound.

A method of operating a substrate processing chamber that includes, prior to a substrate processing operation, flowing a seasoning gas comprising silane and oxygen into said chamber at a flow ratio of greater than or equal to about 1.6:1 oxygen to silane to deposit a silicon oxide film over at least one aluminum nitride nozzle exposed to an interior portion of the chamber. Also, a substrate processing system that includes a housing, a gas delivery system for introducing a seasoning gas into a vacuum chamber, where the gas delivery system comprises one or more aluminum nitride nozzles exposed to the vacuum chamber, a controller and a memory having a program having instructions for controlling the gas delivery system to flow a seasoning gas that has an oxygen to silane ratio greater than or equal to about 1.6:1 to deposit a silicon oxide film on the aluminum nitride nozzles.

Growing community of inventors

Cambridge, MA, United States of America

Jason T Bloking