Rf Micro Devices, Inc.

Jason Stutzman

Edward T Spears

The present disclosure relates to RF power amplifier circuitry that may operate as either a Class AB amplifier or as a Class B amplifier based on a magnitude of RF output power provided by the RF power amplifier circuitry. A transistor bias circuit in the RF power amplifier circuitry may control transitioning between operating as the Class AB amplifier and operating as the Class B amplifier. When the magnitude of the RF output power is below a first threshold, the RF power amplifier circuitry may operate as a Class AB amplifier, and when the magnitude of the RF output power is above the first threshold, the RF power amplifier circuitry may operate as a Class B amplifier.

Bias-based linear high efficiency radio frequency amplifier

The present disclosure relates to RF power amplifier circuitry that may include a source termination circuit, a load termination circuit, or both used in an unconventional manner to shape amplitude-based amplitude modulation (AM-AM) distortion, amplitude-based phase modulation (AM-PM) distortion, or both to extend a linear operating range of the RF power amplifier circuitry. Conventional RF power amplifier circuitry may operate as a Class F RF power amplifier, which may use termination circuits to create impedance valleys at even harmonics of an RF carrier frequency to improve a saturated efficiency of the RF power amplifier circuitry. However, the termination circuits of the present disclosure may create impedance valleys that are not at even harmonics of an RF carrier frequency to shape amplitude-based distortion, thereby extending a linear operating range of the RF power amplifier circuitry.

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Belews Creek, NC, United States of America

Jason Stutzman