International Business Machines Corporation

Massachusetts Institute of Technology

Micron Technology Incorporated

University of Colorado

Globalfoundries Inc.

Other

Jason Scott Orcutt

Vladimir Marko Stojanovic

Yves Corfield Martin

Tymon Barwicz

Rajeev J Ram

Sami Rosenblatt

William M Green

Milos A Popovic

Martin O Sandberg

Hanhee Paik

Karan Mehta

Jean-Olivier Plouchart

Jeffrey Michael Shainline

Barry P Linder

Chi Xiong

Roy Edward Meade

Russell Alan Budd

Abram L Falk

Mounir Meghelli

Amir Hossein Atabaki

Zvi Sternberg

Ofer Tehar-Zahav

Jay Michael Gambetta

Patryk Gumann

Vivekananda P Adiga

Lev Samuel Bishop

Efraim Megged

John J Ellis-Monaghan

Paul Michael Solomon

Stephen McConnell Gates

Jerry M Chow

Douglas Max Gill

Lionel Tombez

Jared Barney Hertzberg

Nicholas Torleiv Bronn

Stefan Filipp

Swetha Kamlapurkar

Devendra K Sadana

Steven M Shank

Marwan H Khater

Markus Brink

Spyridon Skordas

Mark B Ritter

Joyeeta Nag

Benjamin Roy Moss

Moein Malekakhlagh

Fnu Purnawirman

Eugen Schenfeld

Salvatore Bernardo Olivadese

Edward William Kiewra

David C Mckay

Sean Hart

Ricardo Alves Donaton

Jessie Carrigan Rosenberg

James Robert Rozen

Huaiyu Meng

Antonio Corcoles-Gonzalez

Easwar Magesan

Timothy Phung

Harry Jonathon Mamin

Maika Takita

Daniela Florentina Bogorin

Judy L Hoyt

Ryan Daniel Schilling

Michael Stephen Georgas

Charles Holzwarth

Antoine Hervier

The invention includes methods, and the structures formed, for multi-qubit chips. The methods may include annealing a Josephson junction of a qubit to either increase or decrease the frequency of the qubit. The conditions of the anneal may be based on historical conditions, and may be chosen to tune each qubit to a desired frequency.

Frequency tuning of multi-qubit systems

Techniques regarding quantum transducers are provided. For example, one or more embodiments described herein can include an apparatus that can comprise a superconducting microwave resonator having a microstrip architecture that can include a dielectric substrate positioned between a superconducting waveguide and a superconducting ground plane. The superconducting waveguide can have a first material composition. Also, the superconducting ground plane can have a second material composition that is distinct from the first material composition. Further, an optical resonator can be arranged with the dielectric substrate.

Dual-superconductor quantum transducer

A method for adjusting a resonance frequency of a qubit in a quantum mechanical device includes providing a substrate having a frontside and a backside, the frontside having at least one qubit formed thereon, the at least one qubit comprising capacitor pads; and removing substrate material from the backside of the substrate at an area opposite the at least one qubit to alter a capacitance around the at least one qubit so as to adjust a resonance frequency of the at least one qubit.

Superconducting qubit capacitance and frequency of operation tuning

Devices and/or methods provided herein relate to providing conversion of photons between an optical domain and a microwave domain. An electronic structure can comprise a resonator assembly comprising a microwave resonator and an optical resonator, an optical pump waveguide that transmits an optical pump input to the resonator assembly, and an optical signal waveguide, separate from the optical pump waveguide, that transmits an optical signal relative to the resonator assembly. The electronic structure further can comprise a microwave signal waveguide that transmits a microwave signal relative to the resonator assembly. The optical pump waveguide can comprise a delay portion that delays receipt of the optical pump input to the resonator assembly through the optical pump waveguide to a time after reduction of a majority of decoherence of the resonator assembly caused by scattering of a portion of the optical pump input, which portion does not enter the optical pump waveguide.

Electro-optic transducer with integrated optical delay line

Apparatuses and methods are described for laser annealing of a qubit device using a plurality of optical beams. According to an embodiment, a method of tuning a qubit device can comprise generating an optical beam, splitting the optical beam in a plurality of optical beams, and annealing a Josephson junction of the qubit device by projecting the plurality of optical beams onto a region of the qubit device adjacent to the Josephson junction. The disclosed techniques can also be applied for annealing other types of electrical components of various microscale integrated circuit devices.

Laser annealing of qubits using a diffractive beam splitter

Systems and techniques that facilitate enabling transfer of a quantum state between a quantum device and a microwave resonator of a microwave optical transducer. In various embodiments, a system can comprise a quantum device, a microwave optical transducer including a microwave resonator, and a coherent interconnect. In various embodiments, the coherent interconnect can be between the quantum device and the microwave optical transducer that can enable bi-directional transfer of a quantum state between the quantum device and the microwave resonator. In various embodiments, the microwave optical transducer can be separately packaged from the quantum device. With various embodiments, the coherent interconnect can be a superconducting coaxial cable.

Coherent interconnects between superconducting qubits and microwave-optical transducers

A qubit control system for a quantum computer includes an optical waveguide configured to receive and transmit therethrough a wavelength division multiplexed optical signal which has a plurality of modulated optical carriers, each optical carrier being at a different optical wavelength and carrying a digital qubit control signal; an optical demultiplexer optically coupled to the optical waveguide to receive the multiplexed optical signal to recover the plurality of modulated optical carriers; a plurality of photodetectors in communication with the optical demultiplexer; a plurality of cryogenic filters in communication with the plurality of photodetectors, each being configured to filter corresponding one of the plurality of digital qubit control signals to provide a corresponding one of a plurality of analog qubit control signals which is directed to a corresponding superconducting qubit and the photodetectors. The cryogenic filters are provided at a cryogenic temperature.

Optically multiplexed quantum control interface

Techniques regarding quantum transducers are provided. For example, one or more embodiments described herein can include an apparatus that can include a superconducting microwave resonator having a microstrip architecture that includes a dielectric layer positioned between a superconducting waveguide and a ground plane. The apparatus can also include an optical resonator positioned within the dielectric layer.

Quantum transducers with embedded optical resonators

An optical modulator is disclosed that includes an optical resonator structure. The optical resonator structure includes at least one non-linear portion, the at least one non-linear portion comprising at least one radial junction region. The at least one radial junction region is formed between at least first and second materials, respectively, having different electronic conductivity characteristics. A principal axis of the at least one radial junction region is oriented along a radius of curvature of the at least one non-linear portion. The optical modulator includes an optical waveguide that is coupled to the at least one non-linear portion of the optical resonator structure.

Optical modulator from standard fabrication processing

Techniques regarding tiling a CR gate configuration to one or more lattices characterizing quantum circuit topologies are provided. For example, one or more embodiments described herein can comprise a system, which can comprise a memory that can store computer executable components. The system can also comprise a processor, operably coupled to the memory, and that can execute the computer executable components stored in the memory. The computer executable components can comprise a tiling component that can generate a cross-resonance gate configuration that delineates a control qubit assignment and a target qubit assignment in conjunction with a frequency allocation onto a lattice characterizing a quantum circuit topology.

Tiling of cross-resonance gates for quantum circuits

A quantum transducer device that comprises a microwave resonator component and optical resonator component that receives and transduce a set of optical photons and at least one of: a voltage pulse or modulated laser pulse, and generate a single microwave photon output.

Active electro-optic quantum transducers comprising resonators with switchable nonlinearities

Techniques for the integration of SiGe/Si optical resonators with qubit and CMOS devices using structured substrates are provided. In one aspect, a waveguide structure includes: a wafer; and a waveguide disposed on the wafer, the waveguide having a SiGe core surrounded by Si, wherein the wafer has a lower refractive index than the Si (e.g., sapphire, diamond, SiC, and/or GaN). A computing device and a method for quantum computing are also provided.

Qubit-optical-CMOS integration using structured substrates

Techniques regarding microwave-to-optical quantum transducers are provided. For example, one or more embodiments described herein can include an apparatus that can include a microwave resonator on a dielectric substrate and adjacent to an optical resonator, and a photon barrier structure at least partially surrounding an optical resonator, wherein the photon barrier structure is configured to provide isolation of the microwave resonator from optical photons in the dielectric substrate outside the photon barrier structure.

Microwave-to-optical quantum transducers

Circuits and methods of operation that can facilitate reducing surface losses for quantum devices are provided. In one example, a quantum device can comprise a dielectric layer, a first electrode, and a second electrode. The dielectric layer can comprise a recess formed in a surface of the dielectric layer that reduces a thickness of the dielectric layer from a first thickness external to a footprint of the recess to a second thickness within the footprint of the recess. The second thickness can be less than the first thickness. The first electrode can be positioned within the footprint of the recess. The second electrode can be electrically isolated from the first electrode by the dielectric layer. The first and second electrodes can be positioned on opposing surfaces of the dielectric layer.

Quantum device with low surface losses

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Katonah, NY, United States of America

Jason Scott Orcutt