Kla Corporation

Kla-tencor Technologies Corporation

Jason Saito

Xiaomeng Shen

Mark Davis Smith

David B Owen

Franz X Zach

Dieter Mueller

Prasanna Dighe

Franz Zach

Wei-Ning Shen

A wafer shape metrology system includes a wafer shape metrology sub-system configured to perform one or more stress-free shape measurements on a first wafer, a second wafer, and a post-bonding pair of the first and second wafers. The wafer shape metrology system includes a controller communicatively coupled to the wafer shape metrology sub-system. The controller is configured to receive stress-free shape measurements from the wafer shape sub-system; predict overlay between one or more features on the first wafer and the second wafer based on the stress-free shape measurements of the first wafer, the second wafer, and the post-bonding pair of the first wafer and the second wafer; and provide a feedback adjustment to one or more process tools based on the predicted overlay. Additionally, feedforward and feedback adjustments may be provided to one or more process tools.

System and method for determining post bonding overlay

A method of using removable opaque coating for accurate optical topography measurements on top surfaces of transparent films includes: depositing a highly reflective coating onto a top surface of a wafer, measuring topography on the highly reflective coating, and removing the highly reflective coating from the wafer. The highly reflective coating includes an organic material. The highly reflective coating comprises a refractive index value between one and two. The highly reflective coating comprises a complex wavelength greater than one at six-hundred and thirty-five nanometers. The highly reflective coating reflects at least twenty percent of incident light. The highly reflective coating when deposited maintains an underlayer pattern topography at a resolution of forty by forty micrometers. The highly reflective coating does not cause destructive stress to the wafer.

Removable opaque coating for accurate optical topography measurements on top surfaces of transparent films

Various methods and systems for identifying defect types on a wafer are provided. One computer-implemented method for identifying defect types on a wafer includes acquiring output of an inspection system for defects detected on a wafer. The output is acquired by different combinations of illumination and collection channels of the inspection system. The method also includes identifying defect types of the defects based on the output acquired by a set of the different combinations. The set of the different combinations is selected based on the defect types to be identified on the wafer and a wafer type of the wafer such that a different set of the different combinations of the illumination and collection channels is used for identifying different defect types on different wafer types.

Methods and systems for identifying defect types on a wafer

Growing community of inventors

Milpitas, CA, United States of America

Jason Saito