Harris Corporation

Jds Uniphase Corporation

Jason Reed

Karl M Kissa

Richard D Nelson

Marc K Von Gunten

Charles Andrew Hulse

Benjamin F Catching

Claude Hilbert

Jerry Zieba

Glen Drake

Donald M Friedrich

Calvin Lee Adkins

William J Minford

Jason Jiazhan Xu

Michael Alan Gribbons

Hiren V Shah

David John Tammen

Julia Duncan

The invention relates to a wafer scale process for the manufacture of optical waveguide devices, and particularly for the manufacture of ridge waveguide devices, and the improved waveguides made thereby. The present invention has found a process for achieving sub-micron control of an optical waveguiding layer thickness by providing a dimensionally stable wafer assembly into which adhesive can be introduced without altering the planar relationship between a carrier wafer and an optically transmissive wafer in wafer scale manufacture. This process permits wafer scale manufacture of optical waveguide devices including thin optically transmissive layers. A pattern of spacer pedestals is created by a deposition and etch back, or by a surface etch process to precisely reference surface information from a master surface to a carrier wafer to a thin optically transmissive wafer. The tolerance achievable in accordance with this process provides consistent yield across the wafer.

Wafer scale method of manufacturing optical waveguide devices and the waveguide devices made thereby

An electronic device, such as a filter or phase shifter, for example, includes a substrate, and a MEMS capacitor on the substrate and having a plurality of selectable capacitance values. The MEMS capacitor preferably includes a lower capacitor electrode on the substrate, and a movable bridge including end portions connected to the substrate laterally adjacent the lower capacitor electrode. The movable bridge may also include a conductive medial portion between the end portions defining an upper capacitor electrode suspended above the lower capacitor electrode and being movable between an upper position and a lower position by an electrostatic force generated between the capacitor electrodes. The upper and lower positions provide respective low and high selectable capacitance values. Moreover, the movable bridge may further include at least one travel limiting portion between the end portions for engaging adjacent substrate portions to keep the upper capacitor electrode in a predetermined spaced relation from the lower capacitor electrode when in the lower position. This travel limiting feature of the MEMS capacitor is relatively easy to fabricate and avoids the sticking or stiction problem of some other types of MEMS capacitors.

Electronic device including multiple capacitance value MEMS capacitor and associated methods

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West Hartford, CT, United States of America

Jason Reed