Intel Corporation

Jason Peck

Van H Le

Abhishek A Sharma

Noriyuki Sato

Bernhard Sell

Hui Jae Yoo

Elliot Tan

Travis W LaJoie

Chieh-Jen Ku

Pei-Hua Wang

Sarah Atanasov

Tobias Brown-Heft

Thin film transistors fabricated using a spacer as a fin are described. In an example, a method of forming a fin transistor structure includes patterning a plurality of backbone pillars on a semiconductor substrate. The method may then include conformally depositing a spacer layer over the plurality of backbone pillars and the semiconductor substrate. A spacer etch of the spacer layer is then performed to leave a sidewall of the spacer layer on a backbone pillar to form a fin of the fin transistor structure. Other embodiments may be described and claimed.

Fabrication of thin film fin transistor structure

Growing community of inventors

Hillsboro, OR, United States of America

Jason Peck