International Business Machines Corporation

Globalfoundries Inc.

Jason P Ritter

Fen Chen

Edward Crandal Cooney, Iii

Eric Jeffrey White

Matthew T Tiersch

Michael T Brigham

Graham M Bates

Eva A Shah

Patrick S Spinney

Joseph K Comeau

Jonathan M Pratt

Anna Tilley

Charles H Wilson

Joseph K V Comeau

Gerald J Scilla

Adele M Mahoney

Timothy Charles Krywanczyk

Steven Ross Codding

Steven G Perrotte

A structure and a method. The structure includes a semiconductor substrate; a stack of wiring levels from a first wiring level to a last wiring level, the first wiring level closest to the semiconductor substrate and the last wiring level furthest from the semiconductor substrate, the stack of wiring levels including an intermediate wiring level between the first wiring level and the last wiring level; active devices contained in the semiconductor substrate and the first wiring level, each wiring level of the stack of wiring levels comprising a dielectric layer containing electrically conductive wire; a trench extending from the intermediate wiring level, through the first wiring level into the semiconductor substrate; and a chemical agent filling the trench, portions of at least one wiring level of the stack of wiring levels not chemically inert to the chemical agent or a reaction product of the chemical agent.

Semiconductor chip with anti-reverse engineering function

A composition and a method for chemical mechanical polishing. The composition includes a surfactant anion an alkyl alcohol and a diluent. The composition further includes abrasive particles and an oxidizer. The method includes providing the composition on a surface to be polished and polishing the surface by contacting the surface with a polishing pad.

Slurry for chemical-mechanical polishing of metals and use thereof

A composition and a method for chemical mechanical polishing. The composition includes a surfactant anion an alkyl alcohol, a controlled amount of chloride ion source and a diluent. The composition further includes abrasive particles and an oxidizer. The method includes providing the composition on a surface to be polished and polishing the surface by contacting the surface with a polishing pad.

Slurry for chemical-mechanical polishing of copper and use thereof

A semiconductor structure fabrication method for removing a tape physically attached to a device side of the semiconductor substrate by an adhesive layer of the tape, wherein the adhesive layer comprises an adhesive material. The method includes the step of submerging the tape in a liquid chemical comprising monoethanolamine or an alkanolamine for a pre-specified period of time sufficient to allow for a separation of the tape from the semiconductor substrate without damaging devices on the semiconductor substrate.

Tape removal in semiconductor structure fabrication

A test environment and an associated method of testing and analyzing a semiconductor package material containing a molding compound, for stability in a sustained oxygen environment. Test samples are exposed to a pressurized gas containing oxygen, under elevated temperature below the glass transition temperature of the molding compound. Control samples are exposed to a pressurized inert gas under similar or more severe conditions of gas pressure, temperature, and humidity. At least one characteristic common to the test samples and the control samples is measured. A determination is made as to whether there exists at least one significant difference between the at least one measured characteristic of the test samples and the control samples.

Pressurized oxygen for evaluation of molding compound stability in semiconductor packaging

Growing community of inventors

Jericho, VT, United States of America

Jason P Ritter