Intel Corporation

Jason M Gamba

Robert Alan May

Gang Duan

Tarek A Ibrahim

Xavier Francois Brun

Rahul N Manepalli

Sanka Ganesan

Ram S Viswanath

Manish Dubey

Praneeth Kumar Akkinepally

Frank Truong

Kristof Darmawikarta

Omkar G Karhade

Brandon C Marin

Wei-Lun Kane Jen

Bai Nie

Yosuke Kanaoka

Jesse Jones

Vishal Shajan

Sujit Sharan

Debendra Mallik

Srinivas V Pietambaram

James E Jaussi

Nitin A Deshpande

Zhichao Zhang

Yonggang Li

Jeremy D Ecton

Javier Soto Gonzalez

Suddhasattwa Nad

Steve S Cho

Xiaoqian Li

Sameer Paital

Arnab Sarkar

Whitney Michael Bryks

Haobo Chen

Kenneth Brown

Divya Pratap

Mohit Bhatia

Kemal Aygün

Suresh V Pothukuchi

Bohan Shan

Rajesh Inti

Xiaoxuan Sun

Chelsea M Groves

Suohai Mei

Susheel Jadhav

Dowon Kim

Embodiments disclosed herein include optical packages. In an embodiment, an optical package comprises a package substrate, and a photonics die coupled to the package substrate. In an embodiment, a compute die is coupled to the package substrate, where the photonics die is communicatively coupled to the compute die by a bridge in the package substrate. In an embodiment, the optical package further comprises an optical waveguide embedded in the package substrate. In an embodiment, a first end of the optical waveguide is below the photonics die, and a second end of the optical waveguide is substantially coplanar with an edge of the package substrate.

High bandwidth optical interconnection architectures

Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first die, having a first surface and an opposing second surface, in a first layer; a redistribution layer (RDL) on the first layer, wherein the RDL includes conductive vias having a greater width towards a first surface of the RDL and a smaller width towards an opposing second surface of the RDL; wherein the first surface of the RDL is electrically coupled to the second surface of the first die by first solder interconnects having a first solder; and a second die in a second layer on the RDL, wherein the second die is electrically coupled to the RDL by second solder interconnects having a second solder, wherein the second solder is different than the first solder.

Microelectronic assemblies including interconnects with different solder materials

Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic component may include a substrate having a first face and an opposing second face, wherein the substrate includes a through-substrate via (TSV); a first mold material region at the first face, wherein the first mold material region includes a first through-mold via (TMV) conductively coupled to the TSV; and a second mold material region at the second face, wherein the second mold material region includes a second TMV conductively coupled to the TSV.

Microelectronic component having molded regions with through-mold vias

Embodiments disclosed herein include electronic packages and methods of making electronic packages. In an embodiment, the electronic package comprises a package substrate, an array of first level interconnect (FLI) bumps on the package substrate, wherein each FLI bump comprises a surface finish, a first pad on the package substrate, wherein the first pad comprises the surface finish, and wherein a first FLI bump of the array of FLI bumps is electrically coupled to the first pad, and a second pad on the package substrate, wherein the second pad is electrically coupled to the first pad.

Sacrificial pads to prevent galvanic corrosion of FLI bumps in EMIB packages

Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate having a first surface and an opposing second surface; a microelectronic component embedded in the package substrate, the microelectronic component including: a substrate having a surface, where the substrate includes a conductive pathway and a mold material region at the surface, where the mold material region includes a through-mold via (TMV) electrically coupled to the conductive pathway, and where the mold material region is at the second surface of the package substrate; and a die conductively coupled, at the second surface of the package substrate, to the package substrate and to the TMV of the microelectronic component.

Embedded multi-die interconnect bridge having a substrate with conductive pathways and a molded material region with through-mold vias

An electronic device includes a substrate, and the substrate may include one or more layers. The one or more layers may include a dielectric material and may include one or more electrical traces. The electronic device may include a layer of conductive material, and the layer of conductive material may define a void in the conductive material. The electronic device may include a fiducial mark, and the fiducial mark may include a filler material positioned in the void defined by the conductive material. The fiducial mark may be coupled to the layer of conductive material. The filler material may have a lower reflectivity in comparison to the conductive material, for instance to provide a contrast with the conductive material.

Dielectric filler material in conductive material that functions as fiducial for an electronic device

Disclosed herein are microelectronic structures including bridges, as well as related assemblies and methods. In some embodiments, a microelectronic structure may include a substrate and a bridge.

Microelectronic structures including bridges

A system is disclosed, which comprises a component carrier having a first side, and a second side opposite the first side; and a light source to couple light into the carrier. In an example, the carrier is to propagate, through internal reflection, at least a portion the light to both the first and second sides of the carrier. The portion of light may be sufficient to release a first component and second component affixed to the first and second sides of the carrier via a first photosensitive layer and second photosensitive layer, respectively.

Dual side de-bonding in component carriers using photoablation

Embedded multi-die interconnect bridge having a molded region with through-mold vias

Growing community of inventors

Gilbert, AZ, United States of America

Jason M Gamba