National Research Council of Canada

University of Alberta

Quantum Silicon Inc.

Jason L Pitters

Robert A Wolkow

Paul G Piva

Gino A Dilabio

Marco Taucer

Mohammad Rashidi

Taleana Huff

Roshan Achal

Martin Cloutier

Bruno Vieira Da Cunha Martins

Lucian Livadaru

Konrad Walus

Jacob Retallick

Thomas Dienel

Wyatt Vine

Radovan Urban

Robert A Wolcow

Mohamed Rezeq

An atomic orbital based memory storage is provided that includes a plurality of surface atoms forming dangling bonds (DBs) and a subset of the plurality of surface atoms passivated with spatial control to form covalent bonds with hydrogen, deuterium, or a combination thereof. The atomic orbital based data storage that can be rewritten and corrected as needed. The resulting data storage is also archival and capable of high data densities than any known storage as the data is retained in a binary storage or a given orbital being passivated or a dangling bond (DB). A method of forming and reading the atomic orbital data storage is also provided. The method including selectively removing covalent bonds to form dangling bonds (DBs) extending from a surface atom by hydrogen lithography and imaging the covalent bonds spatially to read the atomic orbital data storage.

Lithography for editable atomic-scale devices and memories

A method for treating a wafer is provided with a portion of a semiconductor layer is selectively removed from the wafer so as to create an inactive region of the wafer surrounding a first active region of the wafer. The inactive region of the wafer has an exposed portion of an insulator layer, but none of the semiconductor layer. The first active region of the wafer includes a first portion of the semiconductor layer and a first portion of the insulator layer. At least one conductor is formed in contact with the first portion of the semiconductor layer, such that the conductor and the first portion of the semiconductor layer form a portion of an electrical circuit. The first active region of the wafer is selectively treated to remove a native oxide layer from the first portion of the semiconductor layer. A resulting wafer is also disclosed.

Treating a silicon on insulator wafer in preparation for manufacturing an atomistic electronic device interfaced with a CMOS electronic device

A method for the patterning and control of single electrons on a surface is provided that includes implementing scanning tunneling microscopy hydrogen lithography with a scanning probe microscope to form charge structures with one or more confined charges; performing a series of field-free atomic force microscopy measurements on the charge structures with different tip heights, where interaction between the tip and the confined charge are elucidated; and adjusting tip heights to controllably position charges within the structures to write a given charge state. The present disclose also provides a Gibb's distribution machine formed with the method for the patterning and control of single electrons on a surface. A multi bit true random number generator and neural network learning hardware formed with the above described method are also provided.

Initiating and monitoring the evolution of single electrons within atom-defined structures

A quantum device is provided that includes controllably quantum mechanically coupled dangling bonds extending from a surface of a semiconductor material. Each of the controllably quantum mechanically coupled dangling bonds has a separation of at least one atom of the semiconductor material. At least one electrode is provided for selectively modifying an electronic state of the controllably quantum mechanically coupled dangling bonds. By providing at least one additional electron within the controllably quantum mechanically coupled dangling bonds with the proviso that there exists at least one unoccupied dangling bond for each one additional electron present, the inventive device is operable at least to 293 degrees Kelvin and is largely immune to stray electrostatic perturbations. Room temperature operable quantum cellular automata and qubits are constructed therefrom.

Method for operating an electronic state device by perturbating dangling bond electronic states

Method for quantum computation by perturbing dangling bond electronic states

A quantum device is provided that includes controllably quantum mechanically coupled dangling bonds extending from a surface of a semiconductor material. Each of the controllably quantum mechanically coupled dangling bonds has a separation of at least one atom of the semiconductor material. At least one electrode is provided for selectively modifying an electronic state of the controllably quantum mechanically coupled dangling bonds. By providing at least one additional electron within the controllably quantum mechanically coupled dangling bonds with the proviso that there exists at least one unoccupied dangling bond for each one additional electron present, the inventive device is operable at least to 293 degrees Kelvin and is largely immune to stray electrostatic perturbations. Room temperature operable quantum cellular automata and qubits are constructed thereform.

Method for controlling quantum dot device by perturbing dangling bond electronic states

A nanotip, is fabricated by modifying a precursor nanotip having an apex and a shank by applying an electric field in the presence of a reactive gas to perform field-assisted etching wherein atoms are preferentially removed from the shank by chemical interaction with the reactive gas, and controlling the reactive gas pressure and/or tip voltage to vary the electric field so as to promote field evaporation of apex atoms during fabrication of the nanotip and thereby control the overall profile of the resulting nano-tip. The method permits shaping of the overall tip profile.

Method of fabricating nanotips with controlled profile

Atomistic quantum dot

An atomic scale electroconductivity device with electrostatic regulation includes a perturbing species having a localized electronic charge. A sensing species having an electronic conductivity is placed in proximity to the perturbing species at a distance sufficient to induce a change in the electronic conductivity associated with the localized electronic charge. Electronics are provided to measure the conductivity via the sensing species. A temporally controlled atomic scale transistor is provided by biasing a substrate to a substrate voltage with respect to ground.

Electrostatically regulated atomic scale electroconductivity device

An atomic scale electroconductivity device with electrostatic regulation is provided that includes a perturbing species having a localized electronic charge ol a dangling bond. A sensing species having an electronic conductivity is placed in proximity to the perturbing species at a distance sufficient to induce a change in the electronic conductivity associated with the localized electronic charge. Electronics are provided to measure the conductivity via the sensing species. The dangling bond functions as a single atom gate electrode.

A method of fabricating nano-tips involves placing a precursor nanotip with an apex and shank in a vacuum chamber; optionally applying an electric field to the precursor nanotip to remove oxide and other contaminant species; subsequently admitting an etchant gas to the vacuum chamber to perform field assisted etching by preferential adsorption of the etchant gas on the shank; and gradually reducing the applied electric field to confine the adsorption of the etchant gas to the shank as etching progresses.

Growing community of inventors

Edmonton, Canada

Jason L Pitters