Ferro Corporation

Ppg Industries Ohio, Inc.

Persee Chemical Co., Ltd.

Amia Corporation

Jason Keleher

Yuzhuo Li

Stuart Damon Hellring

Charles F Kahle

Colin P McCann

Ning Gao

A photo-chemical remediation of Cu-CMP waste streams basically includes the following acts: adding photo-catalyst particles into waste streams containing copper ions and organic pollutants and exposing the waste streams to UV light or sunlight to make copper ions become deposited on surfaces of the photo-catalyst particles. Whereby, the copper ions are removed from the waste streams. Meanwhile, organic and inorganic pollutants are decomposed by the photolysis capability of the photo-catalyst to make the waste streams dischargable within environmental standards to the environment.

Photo-chemical remediation of Cu-CMP waste

The present invention provides a method of removing copper overlaying a tantalum-based barrier layer during the fabrication of a copper damascene structure having a plurality of copper lines. The method includes providing a chemical-mechanical polishing slurry and polishing the copper layer using the slurry until the tantalum-based barrier layer is exposed. The slurry includes an oxidizing agent that releases free radicals and a non-chelating free radical quencher that retards the corrosion of said copper lines during chemical mechanical polishing. Preferred non-chelating free radical quenchers are ascorbic acid, thiamine, 2-propanol, and alkyl glycols. The present invention also provides copper damascene structures formed according to the method.

Method of fabricating a copper damascene structure

This invention relates to a slurry composition and a method of its preparation. In particular, the slurry composition of the present invention includes a silica wherein the silica comprises a surface modification. The silica-based slurry of the present invention is suitable for polishing articles and especially useful for chemical-mechanical planarization (&ldquo;CMP&rdquo;) of semiconductor and other microelectronic substrates.

Silica-based slurry

The present invention provides a chemical-mechanical polishing slurry for use in removing copper overlaying a tantalum-based barrier layer during the fabrication of a copper damascene structure, and a method of retarding the corrosion of copper lines during the chemical-mechanical polishing of a copper damascene structure using the slurry. The slurry according to the invention includes an oxidizing agent that releases free radicals and a non-chelating free radical quencher that is effective to retard the corrosion of the copper lines during chemical-mechanical polishing. Preferred oxidizing agents that release free radicals used in the slurry according to the invention include peroxides, peroxydiphosphates, and persulfates. Preferred non-chelating free radical quenchers used in the slurry according to the invention include ascorbic acid, thiamine, 2-propanol, and alkyl glycols, with ascorbic acid being most preferred.

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Schenectady, NY, United States of America

Jason Keleher