Inpria Corporation

Samsung Electronics Co., Ltd.

Tokyo Electron Limited

Oregon State University

State of Oregon

Jason K Stowers

Douglas A Keszler

Alan J Telecky

Andrew Grenville

Stephen T Meyers

Brian J Cardineau

Michael K Kocsis

Peter De Schepper

Sangyoon Woo

Jeremy T Anderson

Chawon Koh

Michael Greer

Tsunehiro Nishi

Soo Young Choi

Kirsten Louthan

Peter A Hersh

Shu-Hao L Chang

Sonia Castellanos Ortega

Douglas A Kreszler

The processing of radiation patternable organometallic coatings is shown to be improved through the appropriate selection of post processing conditions between coating and development of the pattern. In particular, a coated wafer can be subjected to process delays to allow aging of the coating at various process points, in particular following irradiation. Process delays can be combined and interspersed with heating steps. The atmosphere above the coated wafer at various process steps can be adjusted to obtain desired improvements in the development of the pattern. Reactive gases can be beneficial with respect to improvement of coating properties.

Process environment for inorganic resist patterning

A method is described for stabilizing organometallic coating interfaces through the use of multilayer structures that incorporate an underlayer coating. The underlayer is composed of an organic polymer that has crosslinking and adhesion-promoting functional groups. The underlayer composition may include photoacid generators. Multilayer structures for patterning are described based on organometallic radiation sensitive patterning compositions, such as alkyl tin oxo hydroxo compositions, which are placed over a polymer underlayer.

Stabilized interfaces of inorganic radiation patterning compositions on substrates

Stabilized precursor solutions can be used to form radiation inorganic coating materials. The precursor solutions generally comprise metal suboxide cations, peroxide-based ligands and polyatomic anions. Design of the precursor solutions can be performed to achieve a high level of stability of the precursor solutions. The resulting coating materials can be designed for patterning with a selected radiation, such as ultraviolet light, x-ray radiation or electron beam radiation. The radiation patterned coating material can have a high contrast with respect to material properties, such that development of a latent image can be successful to form lines with very low line-width roughness and adjacent structures with a very small pitch.

Radiation based patterning methods

Multiple patterning approaches using radiation sensitive organometallic materials is described. In particular, multiple patterning approaches can be used to provide distinct multiple patterns of organometallic material on a hardmask or other substrate through a sequential approach that leads to a final pattern. The multiple patterning approach may proceed via sequential lithography steps with multiple organometallic layers and may involve a hardbake freezing after development of each pattern. Use of an organometallic resist with dual tone properties to perform pattern cutting and multiple patterning of a single organometallic layer are described. Corresponding structures are also described.

Multiple patterning with organometallic photopatternable layers with intermediate freeze steps

Provided herein are photoresist compositions and methods for fabricating semiconductor devices using the same. A photoresist composition may include an organometallic material, a fluorine-containing material, and an organic solvent.

Photoresist compositions and methods for fabricating semiconductor devices using the same

High etch contrast materials provide the basis for using pre-patterned template structure with a template hardmask having periodic holes and filler within the holes that provides the basis for rapidly obtaining high resolution patterns guided by the template and high etch contrast resist. Methods are described for performing the radiation lithography, e.g., EUV radiation lithography, using the pre-patterned templates. Also, methods are described for forming the templates. The materials for forming the templates are described.

Pre-patterned lithography templates

Pre-patterned lithography templates, processes based on radiation patterning using the templates and processes to form the templates

Patterned inorganic layers, radiation based patterning compositions and corresponding methods

Solution processible hardmasks are described that can be formed from aqueous precursor solutions comprising polyoxometal clusters and anions, such as polyatomic anions. The solution processible metal oxide layers are generally placed under relatively thin etch resist layers to provide desired etch contrast with underlying substrates and/or antireflective properties. In some embodiments, the metal oxide hardmasks can be used along with an additional hardmask and/or antireflective layers. The metal oxide hardmasks can be etched with wet or dry etching. Desirable processing improvements can be obtained with the solution processible hardmasks.

Solution processible hardmasks for high resolution lithography

Growing community of inventors

Corvallis, OR, United States of America

Jason K Stowers