Fairchild Semiconductor Corporation

Jason Higgs

Christopher Boguslaw Kocon

Dean E Probst

Joseph Andrew Yedinak

Steven Paul Sapp

Chanho Park

Mark L Rinehimer

Fred Session

Suku Kim

Jaegil Lee

Hui Chen

Richard Stokes

Jayson Preece

In one general aspect, an apparatus can include a semiconductor region, and a trench defined within the semiconductor region. The trench can have a depth aligned along a vertical axis and have a length aligned along a longitudinal axis orthogonal to the vertical axis. The trench can have a first portion of the length included in a termination region of the semiconductor region and can have a second portion of the length included in an active region of the semiconductor region.

Methods and apparatus related to termination regions of a semiconductor device

Termination region of a semiconductor device

A charge balance semiconductor power device comprises an active area having strips of p pillars and strips of n pillars arranged in an alternating manner, the strips of p and n pillars extending along a length of the active area. A non-active perimeter region surrounds the active area, and includes at least one p ring surrounding the active area. One end of at last one of the strips of p pillars extending immediately adjacent an edge of the active area terminates at a substantially straight line at which one end of each of the remainder of the strips of p pillars also end. The straight line extends perpendicular to the length of the active area along which the strips of n and p pillars extend.

Periphery design for charge balance power devices

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Jason Higgs