Yangtze Memory Technologies Co., Ltd.

Jason Guo

Qiang Tang

Methods of peak power management (PPM) for a storage system having multiple memory dies are disclosed. Each memory die includes a first PPM circuit and a second PPM circuit. First PPM circuits of the multiple memory dies are electrically connected to form a first PPM group. Similarly, second PPM circuits are electrically connected to form a second PPM group. Peak power operations can be managed by switching on a first pull-down driver of the first PPM circuit on a selected memory die when a first PPM enablement signal of the first PPM group is zero; waiting for a first delay period; switching on a second pull-down driver of the second PPM circuit on the selected memory die when a second PPM enablement signal of the second PPM group is zero. The PPM enablement signals depend on the current flowing through each pull-down driver in the first and second PPM groups.

Analog peak power management for multi-die operations

Methods of peak power management (PPM) for a storage system having multiple memory dies are disclosed. Each memory die includes a first PPM circuit and a second PPM circuit. First PPM circuits of the multiple memory dies are electrically connected to form a first PPM group. Similarly, second PPM circuits are electrically connected to form a second PPM group. Peak power operations can be managed by switching on a first pull-down driver of the first PPM circuit on a selected memory die when a first PPM enablement signal of the first PPM group is zero; waiting for a first delay period; switching on a second pull-down driver of the second PPM circuit on the selected memory die when a second PPM enablement signal of the second PPM group is zero. The first and second PPM enablement signals depend on the current flowing through each pull-down driver in the first and second PPM groups.

A system includes multiple memory dies. Each of the memory dies includes a PPM circuit including a first pull driver, a second pull driver, and a PPM contact pad connected between the first pull driver and the second pull driver. The PPM contact pads of the multiple memory dies are electrically connected with each other. The PPM circuits of the multiple memory dies are configured to manage peak power operations according to a first pull current flowing through a certain first pull driver of a certain PPM circuit. The first pull current is a sum of second pull currents flowing through second pull drivers of the PPM circuit. Each of the second pull currents is proportional to a current level of a corresponding memory die.

Dynamic peak power management for multi-die operations

A memory device includes memory cells arranged in rows and columns, each memory cell configured to store n-bit of data, where n is a whole number larger than two, and a periphery circuit coupled to the memory cells and configured to program selected memory cells according to n logic pages of current programming data. The periphery circuit includes page buffers, and each page buffer includes latches. The periphery circuit is configured to store the n logic pages of the current programming data in the latches for programming the selected memory cells, release one or more of the latches, by discarding one or more of the n logic pages of the current programming data correspondingly, before the programming the selected memory cells according to the n logic pages of the current programming data is completed, and store one of n logic pages of next programming data in one or more of the latches before the programming the selected memory cells according to the n logic pages of the current programming data is completed.

Non-destructive mode cache programming in NAND flash memory devices

A three-dimensional (3D) memory device and a fabricating method for forming the same are disclosed. The 3D memory device can include an alternating conductor/dielectric layer stack disposed on a substrate, a first staircase structure and a second staircase structure formed in the alternating conductor/dielectric layer stack, a staircase bridge extending in a first direction and electrically connecting the first staircase structure and the second staircase structure, and a first bottom select gate segment covered or partially covered by the staircase bridge. The first bottom select gate segment can include an extended portion extending in a second direction different from the first direction.

Bottom select gate contacts for center staircase structures in three-dimensional memory devices

A memory device comprising multiple memory planes is disclosed. The memory device further comprises a first pump set coupled with the multiple memory planes, and configured to supply a first output voltage to multiple linear regulators during a steady phase, and a second pump set coupled with the multiple memory planes, and configured to supply a second output voltage to the multiple linear regulators during a ramping phase. The multiple linear regulators can includes a first linear regulator set configured to regulate the first output voltage or the second output voltage to generate a first voltage bias for a first group of word lines of the plurality of memory planes, and a second linear regulator set configured to regulate the first output voltage or the second output voltage to generate a second voltage bias for a second group of word lines of the plurality of memory planes.

Asynchronous multi-plane independent scheme dynamic analog resource sharing in three-dimensional memory devices

A method of cache programming of a NAND flash memory in a triple-level-cell (TLC) mode is provided. The method includes discarding an upper page of a first programming data from a first set of data latches in a plurality of page buffers when a first group of logic states are programmed and verified. The plurality of page buffers include the first, second and third sets of data latches, configured to store the upper page, middle page and lower page of programming data, respectively. The method also includes uploading a lower page of second programming data to a set of cache latches, transferring the lower page of the second programming data from the set of cache latches to the third set of data latches after discarding the lower page of the first programming data, and uploading a middle page of the second programming data to the set of cache latches.

A method of peak power management (PPM) for a storage system with multiple memory dies is provided, where each of the multiple memory dies includes a PPM circuit having a PPM contact pad and PPM contact pads of the multiple memory dies are electrically connected. The PPM method includes the following steps: switching on a pull-down driver of the PPM circuit on a selected memory die of the storage system; verifying a PPM enablement signal regulated by a pull-down current flowing through the pull-down driver; and performing a peak power operation on the selected memory die when the PPM enablement signal indicates that a total current of the storage system is less than a maximum total current allowed for the storage system.

A method of cache programming of a NAND flash memory in a triple-level-cell (TLC) mode is provided. The method includes discarding a lower page of a first programming data from a first set of data latches in a plurality of page buffers when a first group of logic states are programmed and verified. The page buffers include the first, second and third sets of data latches configured to store the lower page, a middle page and an upper page of programming data, respectively. The method also includes uploading a lower page of second programming data to a set of cache latches, transferring the lower page of the second programming data from the set of cache latches to the second set of data latches after the discarding the middle page of the first programming data, and uploading a middle page of the second programming data to the set of cache latches.

A method of peak power management (PPM) for a memory chip with multiple memory dies is provided, where each of the multiple memory dies includes a PPM circuit having a PPM contact pad and PPM contact pads of the multiple memory dies are electrically connected. The PPM method includes the following steps: switching on a pull-down driver of the PPM circuit on a selected memory die of the memory chip; verifying a PPM enablement signal regulated by a pull-down current flowing through the pull-down driver; and performing a peak power operation on the selected memory die when the PPM enablement signal indicates that a total current of the memory chip is less than a maximum total current allowed for the memory chip.

Methods of peak power management (PPM) for a memory chip having multiple memory dies are disclosed. Each memory die includes a first PPM circuit and a second PPM circuit. First PPM circuits of the multiple memory dies are electrically connected to form a first PPM group. Similarly, second PPM circuits are electrically connected to form a second PPM group. Peak power operations can be managed by switching on a first pull-down driver of the first PPM circuit on a selected memory die when a first PPM enablement signal of the first PPM group is zero; waiting for a first delay period; switching on a second pull-down driver of the second PPM circuit on the selected memory die when a second PPM enablement signal of the second PPM group is zero. The first and second PPM enablement signals depend on the current flowing through each pull-down driver in the first and second PPM groups.

Growing community of inventors

Hubei, China

Jason Guo