Lam Research Corporation

Jason Augustino

Hong Shih

Armen Avoyan

Yen-Kun Victor Wang

Rajinder Dhindsa

Keith Laurence Comendant

Anthony De La Llera

Saurabh J Ullal

Allan Kent Ronne

Jaehyun Kim

William M Denty, Jr

Anthony J Norell

Duane Outka

Yan Fang

Stephen Whitten

Harmeet Singh

Catherine Zhou

Yaobo Yin

Alex Paterson

Andreas Fischer

John Stephen Drewery

Keith William Gaff

Neil M Benjamin

Seyed Jafar Jafarian-Tehrani

Neil Martin Paul Benjamin

Brett C Richardson

Dean Jay Larson

Hema Swaroop Mopidevi

Shang-I Chou

Sean Kelly O'Brien

Quan Chau

Hanh Tuong Ha

Tim Hart

Charles Rising

Andre W Desepte

Various embodiments include an apparatus to filter radio-frequencies in a plasma-based processing device. In various embodiments, an RF filter device includes a number of substantially-planar spiral-filters electrically coupled to and substantially parallel to each other in a spaced-apart arrangement. In one embodiment, each of the planar spiral-filters is coupled to an adjacent one of the planar spiral filters as either an inside-to-inside electrical connection or an outside-to-outside electrical connection based on an arrangement of the successive spirals so as to increase a total value of inductance. Other methods, devices, apparatuses, and systems are disclosed.

High-power radio-frequency spiral-coil filter

A feed tube for a substrate processing system includes an outer tube and a feed rod. The feed rod is arranged within the outer tube. The feed rod is arranged to provide radio frequency power to the substrate processing system and the outer tube provides a return for the radio frequency power. At least one conductor is routed within the feed rod. The conductor is arranged to provide electrical power to at least one component of the substrate processing system separate from the radio frequency power provided by the feed rod.

Hollow RF feed with coaxial DC power feed

A processing chamber having a chamber housing with a top and sidewalls is provided. The processing chamber has a seal for connecting the sidewalls of the chamber housing to a top of a lower chamber below the processing chamber. A substrate holder is attached to the sidewalls of the chamber housing. Further, a wafer lift ring supported by a side arm extending through the sidewalls has at least three posts each having at least one finger, the top of the fingers defining a first wafer handoff plane. The lower chamber has at least one lowest wafer support that defines a second wafer handoff plane where the height between the first wafer handoff plane and the second wafer handoff plane is not greater than a maximum vertical stroke of a transfer arm that is configured to transfer a wafer from the first wafer handoff plane and the second wafer handoff plane.

Processing chamber with features from side wall

A lower electrode assembly for use in a plasma processing chamber comprises a metal base and upper and lower edge rings. The metal base comprises metal plates brazed together and forming a brazed line on a lower side surface of the base, an edge ring support surface extending horizontally inwardly from the lower side surface and an upper side surface above the edge ring support surface. The upper edge ring comprises a lower surface mounted on the edge ring support surface and the lower edge ring surrounds the lower side surface of the base with a gap between opposed surfaces of the upper and lower edge rings and between the lower edge ring and the outer periphery of the base. The gap has an aspect ratio of total gap length to average gap width sufficient to impede arcing at the location of the braze line.

Lower electrode assembly of plasma processing chamber

A showerhead electrode assembly for a plasma processing apparatus is provided. The showerhead electrode assembly includes a first member attached to a second member. The first and second members have first and second gas passages in fluid communication. When a process gas is flowed through the gas passages, a total pressure drop is generated across the first and second gas passages. A fraction of the total pressure drop across the second gas passages is greater than a fraction of the total pressure drop across the first gas passages.

Showerhead electrode assembly with gas flow modification for extended electrode life

Components of a plasma processing apparatus includes a backing member with gas passages attached to an upper electrode with gas passages. To compensate for the differences in coefficient of thermal expansion between the metallic backing member and upper electrode, the gas passages are positioned and sized such that they are misaligned at ambient temperature and substantially concentric at an elevated processing temperature. Non-uniform shear stresses can be generated in the elastomeric bonding material, due to the thermal expansion. Shear stresses can either be accommodated by applying an elastomeric bonding material of varying thickness or using a backing member comprising of multiple pieces.

Upper electrode backing member with particle reducing features

A five-sided quartz window configured to be mounted on a degas chamber as a UV-transmissive window. The quartz window is made of synthetic quartz and has a uniform thickness. The shape of the quartz window is defined by an upper surface, a lower surface and a sidewall therebetween. The sidewall has five straight sections interconnected by five arcuate sections. The quartz window has four arcuate recesses extending into the sidewall.

Quartz window for a degas chamber

A quartz window with an interior plenum is operable as a shutter or UV filter in a degas chamber by supplying the plenum with an ozone-containing gas. Pressure in the plenum can be adjusted to block UV light transmission into the degas chamber or adjust transmittance of UV light through the window. When the plenum is evacuated, the plenum allows maximum transmission of UV light into the degas chamber.

Ozone plenum as UV shutter or tunable UV filter for cleaning semiconductor substrates

In accordance with one embodiment of the present disclosure, an assembly is provided comprising a multi-component electrode and a peripherally engaging electrode carrier. The peripherally engaging electrode carrier comprises a carrier frame and a plurality of reciprocating electrode supports. The multi-component electrode is positioned in the electrode accommodating aperture of the carrier frame. The backing plate of the electrode comprises a plurality of mounting recesses formed about its periphery. The reciprocating electrode supports can be reciprocated into and out of the mounting recesses. Additional embodiments of broader and narrower scope are contemplated.

Peripherally engaging electrode carriers and assemblies incorporating the same

Methods of cleaning plasma processing chamber components include contacting surfaces of the components with a cleaning solution, while avoiding damage of other surfaces or areas of the components by the cleaning solution. An exemplary plasma processing chamber component to be cleaning is an elastomer bonded electrode assembly having a silicon member with a plasma-exposed silicon surface, a backing member, and an elastomer bonding material between the silicon surface and the backing member.

Cleaning of bonded silicon electrodes

Methods of cleaning backing plates of electrode assemblies, or electrode assemblies including a backing plate and an electrode plate are provided. The methods can be used to clean backing plates and electrode plates made of various materials, such as silicon electrode plates and graphite and aluminum backing plates. The backing plates and electrode assemblies can be new, used or refurbished. A flushing fixture that can be used in the cleaning methods is also provided, the flushing fixture comprising a base plate comprising a recessed inner portion including and an upper surface configured to support the backing plate or the electrode assembly, and a cover plate configured to cover the base plate, the cover plate including at least one liquid passage through which a flushing liquid is introduced into an interior of the flushing fixture defined by the base plate and cover plate.

Methods and apparatus for wet cleaning electrode assemblies for plasma processing apparatuses

A carrier assembly is provided comprising a backside mounted electrode carrier and electrode mounting hardware. The backside mounted electrode carrier comprises an electrode accommodating aperture, which in turn comprises a sidewall structure that is configured to limit lateral movement of an electrode positioned in the aperture. The electrode accommodating aperture further comprises one or more sidewall projections that support the weight of an electrode positioned in the aperture. The electrode mounting hardware is configured to engage an electrode positioned in the electrode accommodating aperture from the backside of the carrier and urge the electrode against the sidewall projections so as to limit axial movement of the electrode in the electrode accommodating aperture. Additional embodiments of broader and narrower scope are contemplated.

Backside mounted electrode carriers and assemblies incorporating the same

A method for cleaning an electrode assembly comprising a backing plate bonded to an electrode plate for a plasma processing assembly, the method including the steps of contacting the backing plate and electrode plate with a solvent; spraying the backing plate and electrode plate with water; ultrasonically cleaning the electrode assembly; enclosing the electrode assembly in a flushing fixture defined by a base plate having a plurality of liquid passages and a cover plate configured to cover the base plate, the cover plate including at least one liquid passage; and flushing the electrode assembly in the flushing fixture by introducing a flushing liquid under pressure through said at least one liquid passage in the cover plate.

Growing community of inventors

Fremont, CA, United States of America

Jason Augustino