Intel Corporation

Jason A Farmer

Daniel B Bergstrom

Jeffrey S Leib

Daniel J Zierath

Michael L McSwiney

Justin S Sandford

Akm Shaestagir Chowdhury

Gopinath Trichy

Provided herein are metal structures that may include a cobalt alloy, a nickel alloy, or nickel, as well as related devices and methods. The metal structures may be formed by chemical vapor deposition (CVD), and may include trace amounts of precursor materials used during the CVD process.

Metal structures, devices, and methods

Technologies for selectively etching oxide and nitride materials on a work piece are described. Such technologies include methods for etching a work piece with a remote plasma that is produced by igniting a plasma gas flow. Microelectronic devices including first and second fins that are laterally offset by a fin pitch to define a first field there between are also described. In embodiments the microelectronic devices include a conformal oxide layer and a conformal nitride layer on at least a portion of the first and second fins, where the conformal nitride layer is on at least a portion of the conformal oxide layer and a sacrificial oxide material is disposed within the first field.

Technologies for selectively etching oxide and nitride materials and products formed using the same

In an example, there is disclosed a chemical compound, including a transition metal, a post-transition metal, a metalloid, and a nonmetal. By way of non-limiting example, the post-transition metal may be aluminum. The transition metal is selected from the group consisting of tungsten, tantalum, hafnium, molybdenum, niobium, zirconium, vanadium, and titanium. The metalloid may be boron or silicon. The nonmetal may be carbon or nitrogen. The compound may be used, for example, as a barrier material in an integrated circuit.

Diffusion barriers

An aspect of the present disclosure relates to a method of forming a barrier layer on a semiconductor device. The method includes placing a substrate into a reaction chamber and depositing a barrier layer over the substrate. The barrier layer includes a metal and a non-metal and the barrier layer exhibits an as-deposited thickness of 4 nm or less. The method further includes densifying the barrier layer by forming plasma from a gas proximate to said barrier layer and reducing the thickness and increasing the density of the barrier layer. In embodiments, during densification 300 Watts or less of power is applied to the plasma at a frequency of 350 kHz to 40 MHz.

Growing community of inventors

Hillsboro, OR, United States of America

Jason A Farmer