Micron Technology Incorporated

Jason A Durand

Karthik Sarpatwari

Nevil N Gajera

Yen Chun Lee

Jessica Chen

Xuan-Anh Tran

Methods, systems, and devices for accessing a multi-level memory cell are described. The memory device may perform a read operation that includes pre-read portion and a read portion to access the multi-level memory cell. During the pre-read portion, the memory device may apply a plurality of voltages to a plurality of memory cells to identify a likely distribution of memory cells storing a first logic state. During the read portion, the memory device may apply a first read voltage to a memory cell based on performing the pre-read portion. The memory device may apply a second read voltage to the memory cell during the read portion that is based on the first read voltage. The memory device may determine the logic state stored by the memory cell based on applying the first read voltage and the second read voltage.

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Boise, ID, United States of America

Jason A Durand