Apple Inc.

Jaroslav Raszka

Mohamed Hassan Abu-Rahma

Victor Zyuban

Shahzad Nazar

Jaemyung Lim

Ajay Bhatia

Yildiz Sinangil

Wei Xu

Greg M Hess

Shingo Suzuki

Rohan U Mandrekar

Per Hakan Hammarlund

Jamie L Langlinais

Alexander B Uan-Zo-li

Amrinder S Barn

Bo Zhao

Sambasivan Narayan

Sung J Kim

Jiangyi Li

Robert O Bruckner

Hans L Yeager

A power delivery sub-system included in a computer system employs a primary voltage regulator circuit that generates a primary supply voltage on a primary power supply node. The power delivery sub-system also includes multiple bypass voltage regulator circuits that source corresponding bypass currents to a local power supply nodes in an integrated circuit. The integrated circuit includes multiple circuit blocks coupled to corresponding ones of the local power supply nodes, and multiple local voltage regulator circuits coupled to the primary power supply node. When a voltage level of a given local power supply node drops below a threshold value, a corresponding local voltage regulator circuit sources a supply current to the given local power supply node.

Merged power delivery

A delay circuit with multiple dependencies on various environmental parameters is disclosed. The delay circuit is configured to receive an input signal. The delay circuit includes a first circuit configured to generate a first amount of delay, wherein the first amount of delay has a direct relationship to a first environmental parameter. The delay circuit also includes a second circuit configured to generate a second amount of delay such that the second amount of delay has an inverse relationship to a second environmental parameter. The delay circuit is configured to generate a delayed output signal based on the first and second amounts of delay generated by the first and second circuits.

Delay circuit with multiple dependencies

A memory array that provides an internal retention voltage without a voltage regulator is disclosed. The memory array includes a first group of bit cells coupled between the power supply rail and a ground switch and a second group of bit cells coupled to a retention select circuit. The retention select circuit is coupled to the ground for the first group of bit cells and the power supply rail. The ground switch and the retention select circuit may be operated to switch the bit cells between a nominal operating voltage and a retention voltage. The retention voltage is provided during inactive periods of the memory array to maintain data in the bit cells during the inactive periods.

Sram bit cell retention

Memory circuits used in computer systems may have different operating modes. In a retention mode, a voltage level of an array power supply node coupled to memory cells included in the memory circuit is reduced to a level sufficient to retain data, but not to perform read and write operations to the memory cells. A power converter circuit may be configured to generate the retention voltage level, and adjust the retention voltage level using a leakage current of dummy memory cells included in the memory circuit.

Retention voltage generator circuit

Computer systems may include multiple power switch circuits for coupling circuit blocks to power supply signals. Different power supply signals may be selected for use in the generation a control signal for a power switch device in the power switch circuit. For example, during a particular operating mode of a power switch circuit coupled to a circuit block, a power supply signal with a voltage level greater than an power supply signal for the circuit block may be used to generate the control signal.

Low leakage power switch

A power switch control circuit is disclosed. A sensor circuit may determine a leakage current of a power switch coupled to a power supply signal and a power terminal of a circuit block. The power switch may be configured to selectively couple or decouple the circuit block from the power supply signal using a switch control signal. The switch control circuit may, in response to receiving a request to open the power switch, determine a target voltage level that is greater than a voltage level of the power supply signal for the switch control signal using the leakage current, and transition the switch control signal from an initial voltage to the target voltage level.

Systems, apparatuses, and methods for reducing leakage current for a memory array. In various embodiments, techniques are implemented for generating a supply voltage for a memory array which tracks the data retention voltage of the memory array. In one embodiment, multiple diodes are implemented in parallel between a supply voltage and the memory array. The diodes have different sizes and different voltage drops, and the diode which will cause the voltage to drop closest to without going below the data retention voltage is selected for routing the supply voltage to the memory array. Since the data retention voltage for the memory array varies over temperature, the temperature of the system is monitored. Based on changes in the temperature, the system changes which diode is in the circuit path for supplying power to the memory array so as to reduce leakage current for the memory array.

Adaptive diode sizing techniques for reducing memory power leakage

In some embodiments, a system includes a bit-cell circuit and a body voltage control circuit. During a sleep mode, the bit-cell circuit receives, via a source node of a transistor, a retention voltage. During an active mode, the bit-cell receives, via the source node, an operating voltage. The body voltage control circuit includes a first transistor that connects a body node of the transistor of the bit-cell circuit to the source node such that during the sleep mode, the body node receives the retention voltage. The body voltage control circuit further includes a second transistor that connects the body node to a voltage source such that during the active mode, the body node receives the operating voltage.

Growing community of inventors

San Jose, CA, United States of America

Jaroslav Raszka