Epistar Corporation

Jar-Yu Wu

Chun-Lung Tseng

Ching-Hsing Shen

Ching-Jang Su

Yu-Ming Kun

Wei-Ting Cheng

Jui-Fen Chien

Yu-Ming Kung

Chiao-Yao Cheng

A light-emitting device, includes: a semiconductor stack, including a top surface, wherein the top surface includes a first region and a second region which are coplanar; a current barrier layer formed on the first region, wherein the current barrier layer includes an insulating material; and a transparent conductive layer formed on the current barrier layer and the second region; and a first electrode formed on the transparent conductive layer; wherein the current barrier layer includes: an electrode region at a position corresponding to the first electrode, having a shape substantially the same as the first electrode; and a plurality of extension regions extending from the electrode region and not covered by the first electrode.

Method of making a light emitting device and light emitting device made thereof

A method of manufacturing a light-emitting device includes: providing a substrate; forming a light-emitting structure comprising an active layer on the substrate; forming a protective layer having a first thickness on the light-emitting structure; etching the protective layer such that the protective layer has a second thickness less than the first thickness; and patterning the protective layer.

Method of making a light emitting device having a patterned protective layer

A manufacturing method of a light-emitting device is disclosed. The method includes: providing a semiconductor wafer, including a substrate having a first surface and a second surface opposite to the first surface; and a semiconductor stack on the first surface; removing a portion of the semiconductor stack to form an exposed region; forming a first reflective structure on the exposed region; and providing a radiation on the second surface corresponding to a position of the first reflective structure.

Light-emitting device and manufacturing method thereof

A light-emitting device is disclosed. The light-emitting device comprises a substrate; an inorganic semiconductor formed on the substrate, comprising a top surface, wherein the top surface comprises a first region and a second region which are coplanar; a current barrier layer formed on the first region, wherein the current barrier layer comprises an insulating material; and a transparent conductive layer formed on the current barrier layer and contacting the second region; wherein the current barrier layer has a sidewall and a bottom surface facing the first region; wherein an angle between the sidewall and the bottom surface is between 10&#xb0;-70&#xb0;.

Light-emitting device

A light-emitting device is disclosed, comprising a substrate; a light-emitting structure on the substrate comprising a first region and a second region; a barrier layer on the first region having a bottom surface and a sidewall, wherein an angle between the sidewall and the bottom surface is between 10&#xb0;70&#xb0;; and a transparent conductive layer formed on the light-emitting structure and the barrier layer; wherein a difference between a thickness of the transparent conductive layer at the sidewall on the barrier layer and a thickness of the transparent conductive layer on the second region of the light-emitting structure forms a ratio not larger than 10 %.

Light emitting device

A method for manufacturing a light-emitting device comprising the steps of: providing a substrate; forming a semiconductor epitaxial stack on the substrate; and forming multiple isolation trenches in the semiconductor epitaxial stack by using a laser beam irradiating the semiconductor epitaxial stack to define multiple light-emitting diode units wherein partial of the substrate is exposed by the isolation trenches.

Growing community of inventors

Hsinchu, Taiwan

Jar-Yu Wu