Seagate Technology Incorporated

Janusz Jozef Nowak

Eric Shane Linville

Brian William Karr

Andrzej Adam Stankiewicz

Zheng Gao

Nurul Amin

Victor Sapozhnikov

Sining Mao

Patrick Joseph Ryan

Taras Grigorievich Pokhil

Olle Gunnar Heinonen

Paul E Anderson

Ned Tabat

Johannes Van Ek

Pu-Ling Lu

Taras Grigoryevich Pokhil

Steven Paul Bozeman

Steven Kalderon

David H Olson

The present invention relates to a head having an air bearing surface for confronting the surface of a storage medium. The head includes a first pole that is spaced apart from a second pole. At least one non-magnetic spacer is positioned between the first pole and the second pole such that the first pole is magnetically decoupled from the second pole. In a further aspect, one or both of the first pole and the second pole can be elliptical in shape.

Recording head for reducing side track erasure

A transistor has an emitter, a spin-selective base, a collector, a first barrier interposed between the spin-selective base and the emitter, a second barrier interposed between the spin-selective base and the collector, and a transfer ratio of more than 10.

Spin transistor with ultra-low energy base-collector barrier

Data is written to a magnetic media, by applying a magnetic write field to the magnetic media with a write pole, in conjunction with a high frequency magnetic field, to the magnetic media to assist writing to the magnetic media. The high frequency magnetic field is generated by applying a specific write current waveform to the magnetic writer, resulting in the generation of a high frequency magnetic write field.

High frequency assisted writing

The present invention provides a tunneling magneto-resistive read sensor structure that improves sensitivity and linear density of the sensor structure. The sensor includes first and second electrodes and a stack positioned between the electrodes. The stack includes first and second free layers with magnetization orientations that are biased relative to each other. A tunneling barrier (insulating layer) or non-magnetic metal spacer is positioned between the first and second free layers. A sense current is passed between the first and second free layers of the stack. The amount of current passing through the first and second free layer changes based upon the orientation of the first and second free layers relative to each other.

Structure to achieve sensitivity and linear density in tunneling GMR heads using orthogonal magnetic alignments

Growing community of inventors

Mahopac, NY, United States of America

Janusz Jozef Nowak