Merck Patent Gmbh

Avecia Limited

Janos Veres

Simon Dominic Ogier

Stephen William Leeming

Beverley Anne Brown

Richard Williams

Remi Manouk Anemian

Stephen G Yeates

Soad Mohialdin-Khaffaf

John D Schofield

Paul Craig Brookes

John Dylan Morgan

Joanne Victoria Allen

Domenico Carlo Cupertino

Richard Thomas Williams

John David Schofield

Stephen George Yeates

An organic semiconducting layer formulation containing an organic binder which has a permittivity, &#x2208;, at 1,000 Hz of 3.3 or less and a polyacene compound of Formula A: and processes for the preparation thereof and uses thereof in various electronic devices.

Organic semiconducting layers

A compound of formula 8 and uses thereof in various electronic devices and in a formulation for ink jet printing and in an organic semiconducting layer formulation.

Organic pentacene semiconducting layers

This invention relates to organic light emitting diodes (OLEDs) and to methods for their manufacture. The invention provides an OLED element or display which enables contrast to be produced in an image. In accordance with the invention a layer of ink is patterned as a blocking layer between two OLED layers. The ink reduces or prevents conduction, i.e. movement of charge, between the two OLED layers in that area of the device. The ink may be dark in color, e.g. black, to increase the contrast ratio of the OLED. The blocking layer is provided between any two layers in the OLED and blocks the charge movement in these areas. The blocking layer may comprise a multiplicity of ink dots, the density of which determines the extent to which conduction is hindered. The blocking layer may be produced as a 'grey-scale' pattern wherein the density of dots is varied across the pattern.

Organic light emitting diodes

A composition for use as an organic semiconducting (OSC) material, the composition comprising: (i) at least one higher molecular weight organic semiconducting compound having a number average molecular weight (M) of at least 5000, and (ii) at least one lower molecular weight organic semiconducting compound having a number average molecular weight (M) of 1000 or less. Use of the composition in an electronic device, e.g. FET or OLED.

Organic semiconducting materials

The present invention relates to a process for reducing the mobility of an semiconductor (OSC) layer in an electronic device, which has a semiconducting channel area, in specific areas outside said channel area by applying an oxidzing agent to the OSC layer.

Process for making an organic field effect transistor

A compound of formula 9 and uses thereof in various electronic devices and in a formulation for ink jet printing and in an organic semiconducting layer formulation.

Organic semiconductor layers

A method for forming an organic electronic device, which method comprises the steps of: The method allows the formation of a device structure wherein the device layers to be patterned are self-aligned. The method enables a multiplicity of layers to be patterned in a single set of printing and lift-off steps using one pattern which ensures the excellent vertical alignment of edges, which would be difficult to achieve by direct printing. Horizontal alignment can also be achieved. The size of the device features can be reduced below the actual printing resolution. Examples of organic electronic devices include OFETs, OLEDs, memory, sensing elements, solar cells, photo-sensors, photoreceptors for electrophotography and the like.

Organic electronic devices

A field effect transistor in which a continuous semiconductor layer comprises:

Field effect transistors and materials and methods for their manufacture

A process of manufacturing an organic field effect device is provided comprising the steps of (a) depositing from a solution an organic semiconductor layer; and (b) depositing from a solution a layer of low permittivity insulating material forming at least a part of a gate insulator, such that the low permittivity insulating material is in contact with the organic semiconductor layer, wherein the low permittivity insulating material is of relative permittivity from 1.1 to below 3.0. In addition, an organic field effect device manufactured by the process is provided.

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Manchester, United Kingdom

Janos Veres