Semisouth Laboratories, Inc.

Power Integrations, Inc.

Janna Casady

Igor Sankin

Joseph Neil Merrett

Kiran V Chatty

David Charles Sheridan

Andrew P Ritenour

Jeffrey Casady

Vertical junction field effect transistors (VJFETs) having improved heat dissipation at high current flow while maintaining the desirable specific on-resistance and normalized saturated drain current properties characteristic of devices having small pitch lengths are described. The VJFETs comprise one or more electrically active source regions in electrical contact with the source metal of the device and one or more electrically inactive source regions not in electrical contact with the source metal of the device. The electrically inactive source regions dissipate heat generated by the electrically active source regions during current flow.

Vertical junction field effect transistors with improved thermal characteristics and methods of making

A self-aligned silicon carbide power MESFET with improved current stability and a method of making the device are described. The device, which includes raised source and drain regions separated by a gate recess, has improved current stability as a result of reduced surface trapping effects even at low gate biases. The device can be made using a self-aligned process in which a substrate comprising an n-doped SiC layer on an n-doped SiC channel layer is etched to define raised source and drain regions (e.g., raised fingers) using a metal etch mask. The metal etch mask is then annealed to form source and drain ohmic contacts. A single- or multilayer dielectric film is then grown or deposited and anisotropically etched. A Schottky contact layer and a final metal layer are subsequently deposited using evaporation or another anisotropic deposition technique followed by an optional isotropic etch of dielectric layer or layers.

Self-aligned silicon carbide semiconductor devices and methods of making the same

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Starkville, MS, United States of America

Janna Casady