Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

Other

Jangsoon Im

Jia Tang

Xiaoxing Zhang

Zhaosong Liu

Liangfen Zhang

Hui Xiao

Yuanchun Wu

Xingyu Zhou

Yuanjun Hsu

Chuan Liu

Poyen Lu

Yingchun Fan

Yuan-jun Hsu

Mingjue Yu

Boru Yang

Changdong Chen

A method of manufacturing a display panel and the display panel are provided. The method of manufacturing the display panel includes providing a substrate; depositing a transparent electrode layer and a first metal layer on the substrate, and etching the transparent electrode layer and the first metal layer to form a light-shielding layer and an anode; forming a buffer layer, an oxide layer, and an insulating layer on the light-shielding layer in sequentially, and the buffer layer and the insulating layer are formed by a same photomask; depositing a second metal layer on the insulating layer and etching the second metal layer to form a source, a gate, and a drain; and forming a pixel defining layer, a light-emitting layer, and a cathode layer on the second metal layer in sequentially.

Method of manufacturing display panel and display panel

The present application proposes a display panel, a manufacturing method for the display panel, and a display module. The display panel includes an array substrate. The array substrate includes a substrate and a thin film transistor and a storage capacitor on the substrate. The storage capacitor includes a first electrode on the substrate, a first insulating layer on the first electrode, a second electrode on the first insulating layer, a second insulating layer on the second electrode, and a third electrode on the second insulating layer. An orthogonal projection of the second electrode on the second insulating layer is on the second insulating layer.

Display panel having a storage capacitor, manufacturing method the same thereof and display module having the same

A display panel and a method of fabricating the same are provided. The display panel has an array substrate having a substrate, a thin film transistor unit and a storage capacitor disposed on the substrate; a light emitting device layer disposed on the array substrate. An orthographic projection of the storage capacitor projected on the light emitting device layer is located within the light emitting device layer.

Display panel having a storage capacitor and method of fabricating same

An organic light emitting diode (OLED) display panel and a method of manufacturing thereof. The display panel including: a baseplate comprising a color film layer; a first transparent conductive layer including a first region corresponding to the color film layer and a second region corresponding to a region for forming a gate lamination layer; an active region including a first active region and a second active region, the first active region is disposed above the first region, and the second active region is disposed above the second region; a gate lamination layer, an interlayer dielectric layer, a second transparent conductive layer, a planarization layer, an anode and a pixel defining layer disposed on the second active region.

Organic light emitting diode display and method of manufacturing thereof

A display panel and a method of producing the display panel are disclosed. A pixel unit and an auxiliary power supply unit are disposed at a portion of the display panel corresponding to the display sub-areas, the auxiliary power supply unit is configured to supply a power to a cathode layer so that an voltage of each of the display sub-areas applied by the cathode layer is equal to or substantially equal to each other. The cathode layer has a first cathode and a second cathode. The auxiliary power supply unit has a power line and an auxiliary power supply electrode. The display panel has an improved display quality in this disclosure.

Display panel and method of producing same

The embodiments of the disclosure provides a method of manufacturing an OLED panel and an OLED panel. The method includes: forming an anode electrode connected to a source electrode of a TFT and a bridge electrode connected to an auxiliary electrode on a TFT substrate; forming a plurality of metal protrusions on the bridge electrode, the surfaces of the metal protrusions having a plurality of corners; sequentially forming an electron transport layer, an electron injection layer and a cathode electrode on the bridge electrode and the metal protrusions; and applying a voltage on the auxiliary electrode or the bridge electrode to burn a portion of the electron transport layer and a portion of the electron injection layer corresponding to the corners of the metal protrusions to connect the cathode electrode and the auxiliary electrode.

Method of manufacturing an OLED panel and OLED panel

A method of manufacturing an OLED panel and an OLED panel are provided. The method includes forming an anode connected to a source of a TFT, and a strap electrode connected to an auxiliary electrode on a TFT substrate. A sharp shaped corner is formed on the strap electrode, therefore an area of the electron transport layer and the electron injection layer corresponding to the sharp shaped corner have a thinner thickness. By applying a voltage between the auxiliary electrode and the cathode, the electron transport layer and the electron injection layer corresponding to the sharp shaped corner are punctured, the cathode is directly connected to the strap electrode and further conducted to the auxiliary electrode, resulting in a signal is inputted to the cathode through the auxiliary electrode during display. The problem of uneven display of the OLED panel due to the IR drop of the cathode is improved.

Method of manufacturing an OLED panel and an OLED panel

The disclosure provides a hybrid CMOS device and a manufacturing method thereof. The manufacturing method of the hybrid CMOS device according to the disclosure uses a low-temperature polysilicon to prepare an active layer of a PMOS transistor, and simultaneously uses a metal oxide semiconductor to prepare an active layer of an NMOS transistor. The two types of semiconductor materials are used in combination to form a hybrid CMOS device. Compared with the existing method for producing an active layer of the PMOS transistor by using a two-dimensional carbon nanotransister material or an organic semiconductor material, the hybrid CMOS device obtained according to the disclosure has superior electrical properties.

Hybrid CMOS device and manufacturing method thereof

The present disclosure provides a transparent OLED display and a manufacturing method thereof. The manufacturing method of the transparent OLED display forms an active layer and a first storage capacitor electrode in the same process. The first storage capacitor electrode is made of the transparent metal oxide semiconductor material. A second storage capacitor electrode is manufactured by two photolithography processes so the second storage capacitor electrode is made of only a transparent conductive oxide material. A storage capacitor region where the first storage capacitor electrode and the second storage capacitor electrode are located is a transparent region. Thus, light transmittance and transparent display effect of the transparent OLED display is enhanced. Further, a terminal located in a peripheral region is formed and only made of the transparent conductive oxide material to prevent it from being corroded by water and oxygen. It enhances service life of the transparent OLED display.

Transparent OLED display with transparent storage capacitor and manufacturing method thereof

A ultraviolet (UV) pretreatment apparatus used in vacuum evaporation includes a housing having a curing chamber disposed inside the housing; an inlet disposed at one end of the housing and an outlet disposed at an opposite end of the housing; and a UV source disposed in the curing chamber. A light absorption layer is disposed on inner walls of the curing chamber.

UV pretreatment apparatus used in vacuum evaporation

An OLED display and manufacture method thereof are provided. The OLED display includes a TFT substrate, the TFT substrate having a plurality of light-blocked pixel isolation layers and a plurality of OLED emissive layers on a surface thereof, and each OLED emissive layer having cathode on a surface thereof. The light-blocked pixel isolation layer includes a wall portion, and the wall portion having a light-blocked portion on a surface thereof. The TFT substrate has a plurality of pixel regions surrounded by the wall portions of the light-blocked pixel isolation layers on the surface thereof. Each pixel region respectively has the OLED emissive layer therein. The OLED display and method avoid light leakage caused by the oblique light of each pixel region emitted into adjacent pixel regions while the OLED emissive layer lighting.

OLED display with light-blocked pixel isolation layer and manufacture method thereof

The present disclosure provides a top-gate self-aligned metal oxide semiconductor TFT and a manufacturing method thereof. By providing a light-shielding layer below an active layer to protect the active layer from light irradiation and prevent the TFT from generating a negative threshold voltage drift phenomenon. Further, by connecting the light-shielding layer to the source, a stable voltage is generated on the light-shielding layer to avoid the floating gate effect, so as to improve the working stability of the TFT effectively. The top-gate self-aligned metal oxide semiconductor TFT produced by the method of the present disclosure does not generate negative threshold voltage drift phenomenon and floating gate effect, resulting in good working stability.

Top-gate self-aligned metal oxide semiconductor TFT and method of making the same

A thin film transistor structure is provided with a glass substrate, a buffer layer, a metal oxide semiconductor layer, a gate insulating layer, a gate metal layer, an interlayer insulating layer, a source metal layer, a drain metal layer, and a protective layer. A shielding metal layer is disposed between the glass substrate and the buffer layer, the gate insulating layer has a shielding metal layer contact hole passing through the gate insulating layer and the buffer layer, and the gate metal layer connects with the shielding metal layer through the shielding metal layer contact hole.

Growing community of inventors

Guangdong, China

Jangsoon Im