Samsung Electronics Co., Ltd.

Jangho Lee

Jongmin Baek

Wookyung You

Suhyun Bark

Deokyoung Jung

Kyeongbeom Park

Kyu-Hee Han

Sanghoon Ahn

Kyuhee Han

Jaesung Hur

Suhyun Park

Seonghun Lim

Sungbin Park

Taeksoo Jeon

A semiconductor device includes transistors on a substrate, a first interlayer insulating layer on the transistors, a lower interconnection line in an upper portion of the first interlayer insulating layer, an etch stop layer on the first interlayer insulating layer and the lower interconnection line, a second interlayer insulating layer on the etch stop layer, an upper interconnection line in the second interlayer insulating layer, the upper interconnection line including a via portion penetrating the etch stop layer to contact the lower interconnection line, and an etch stop pattern on the etch stop layer and in contact with a first sidewall of the via portion. The second interlayer insulating layer extends on the etch stop pattern and a top surface of the etch stop layer free of the etch stop pattern. A dielectric constant of the etch stop pattern is higher than a dielectric constant of the etch stop layer.

Semiconductor device

An image sensor includes a semiconductor substrate having a plurality of pixel regions arranged in a first direction and a second direction that are parallel to an upper surface of the semiconductor substrate. The first direction is perpendicular to the second direction. A grid structure extends in the first direction and the second direction on the semiconductor substrate to define openings corresponding to a plurality of sub-pixel regions of the plurality of the pixel regions, respectively. Color filters are disposed in the openings of the grid structure, respectively. A protective layer covers sidewalls of the grid structure and bottom surfaces of the color filters. The protective layer includes silicon oxide including carbon (C) or nitrogen (N).

Image sensor including a protective layer

Disclosed is a semiconductor device comprising a substrate, a first dielectric layer on the substrate, a first lower conductive line in the first dielectric layer, an etch stop layer on the first dielectric layer, a via-structure that penetrates the etch stop layer and connects to the first lower conductive line, a second dielectric layer on the etch stop layer, and an upper conductive line that penetrates the second dielectric layer and connects to the via-structure. The first dielectric layer includes a dielectric pattern at a level higher than a top surface of the first lower conductive line. The upper conductive line is in contact with a top surface of the etch stop layer. The etch stop layer has at an upper portion a rounded surface in contact with the via-structure.

A semiconductor device includes a first insulating layer disposed on a substrate, a first wiring disposed in the first insulating layer, a first insulating barrier layer disposed on the first insulating layer, an etch-stop layer disposed on the first insulating barrier layer and having an area smaller than an area of the first insulating barrier layer in a plan view, a resistive metal pattern disposed on the etch-stop layer, a second insulating barrier layer disposed on the resistive metal pattern, a second insulating layer covering the first and second insulating barrier layers, a second wiring disposed in the second insulating layer, and a first conductive via disposed between the resistive metal pattern and the second wiring to penetrate through the second insulating barrier layer and the second insulating layer and electrically connect the resistive metal pattern and the second wiring.

Semiconductor device and method of manufacturing semiconductor device

Growing community of inventors

Hwaseong-si, South Korea

Jangho Lee