Electronics and Telecommunications Research Institute

Phovelco.ltd.

Jang Uk Shin

Sang Ho Park

Young-Tak Han

Yongsoon Baek

Sang-Pil Han

Young Tak Han

Yong Soon Baek

Dong-Hun Lee

Oh Kee Kwon

Duk Jun Kim

Jong Hoi Kim

Yong Hwan Kwon

Seo Young Lee

Seoktae Kim

Seok Jun Yun

Yoon Jung Park

Hyun Soo Kim

Dong Hun Lee

Kwang Ryong Oh

Jeong Soo Kim

Chul-Wook Lee

Won Seok Han

Dong-Young Kim

Minhyup Song

Sang Pil Han

Hee Kyung Sung

Dong Hyo Lee

Ho Sung Kim

Hee Keyng Sung

Disclosed are a heterogeneously integrated optical modulator and a manufacturing method thereof. The modulator includes a substrate having a trench, an input waveguide disposed at one side of the trench, an output waveguide disposed at the other side of the trench, a first Mach-Zehnder interferometer including first branch waveguides disposed between the input waveguide and the output waveguide and a heater disposed on one of the first branch waveguides, and second Mach-Zehnder interferometers connected to each of the first branch waveguides.

Heterogeneously integrated optical modulator and manufacturing method thereof

Disclosed are a Mach-Zehnder interferometric optical modulator and a method for manufacturing the same. The modulator includes first and second lower clad layers, a core layer, an upper clad layer, a waveguide, and electrodes. The waveguide may include an input waveguide, a waveguide divider, branch waveguides, and a waveguide combiner. Each of the branch waveguides includes first and second connection regions connected to the waveguide combiner and the waveguide divider, respectively, and a phase shift region having a cross-section of a reverse mesa structure that has an upper width that is the same as widths of the first and second connection regions and a lower width that is smaller than the widths of the first and second connection regions.

Mach-zehnder interferometric optical modulator with shallow ridge waveguide structure and method for manufacturing the same

Disclosed is an optical transmitter module including a directly modulated laser transmitter based on a directly modulated laser (DML) and an arrayed waveguide grating (AWG) chip that is vertically polished. The directly modulated laser transmitter includes a directly modulated laser chip array including one or more directly modulated laser chips, an impedance matching circuit that allows each of the one or more directly modulated laser chips to operate at a critical speed of 100 Gbps per channel or higher, and a radio frequency-flexible printed circuit board (RF-FPCB) that transmits a radio frequency (RF) modulating signal to the directly modulated laser chip array. The arrayed waveguide grating chip includes an optical waveguides that transfer multi-channel optical signals and a wavelength multiplexer that multiplexes the multi-channel optical signals. The directly modulated laser transmitter and the arrayed waveguide grating chip are spaced apart from each other and are optically coupled in chip-to-chip.

Optical transmitter module

Provided herein are a multi-channel receiver optical sub-assembly and a manufacturing method thereof. The multi-channel receiver optical sub-assembly includes a PLC chip having a first side into which an optical signal is received and a second side from which the received signal is outputted, with an inclined surface formed on the second side of the PLC chip at a preset angle, a PD carrier bonded onto the PLC chip and made of a glass material, and an SI-PD bonded onto the PD carrier, a lens being integrated therein. The PLC chip, the PD carrier, and the SI-PD are passively aligned by at least one alignment mark and then are bonded.

Multi-channel receiver optical sub-assembly and manufacturing method thereof

Provided is an optical transmitter module. The optical transmitter module includes a substrate, a ground layer disposed on the substrate, an electro-absorption modulated laser (EML) chip disposed on the ground layer to generate an modulated optical signal, a ground structure disposed on the EML chip and electrically connected to the ground layer, a matching resistor disposed on the ground structure, and a first bonding wire disposed between the EML chip and the matching resistor to electrically connect the EML chip to the matching resistor.

Provided herein is a semiconductor optical device, including a waveguide including lattices buried therein and having a buried hetero (BH) structure formed in an optical oscillation region in which single mode light is oscillated, a waveguide having a deep ridge structure formed in an optical modulation region, and a passive waveguide formed in a mode transition region interposed between the optical oscillation region and the optical modulation region, formed as a connecting structure of the waveguide having the BH structure extending from the optical oscillation region and the waveguide having the deep ridge structure extending from the optical modulation region, and inducing evanescent optical coupling, wherein a width of the waveguide having the BH structure in the mode transition region is smaller than a width of the waveguide having the deep ridge structure in the optical modulation region.

Semiconductor optical device

Provided is an optical module. The optical module includes: an optical bench having a first trench of a first depth and a second trench of a second depth that is lower than the first depth; a lens in the first trench of the optical bench; at least one semiconductor chip in the second trench of the optical bench; and a flexible printed circuit board covering an upper surface of the optical bench except for the first and second trenches, wherein the optical bench is a metal optical bench or a silicon optical bench.

Optical modules

Provided herein is an optical module including an optical bench having a first step with a first depth and a second step with a second depth that is smaller than the first depth; a silicon carrier disposed above the first step, and where at least one semiconductor chip is installed; an AWG chip (Arrayed Waveguide Grating chip) secured to the second step, extends up to the first step, and is chip-to-chip bonded with the silicon carrier above the first step; a lens disposed on an upper surface of the optical bench where the first step and the second step are not formed; and a metal package surrounding the optical bench, silicon carrier, AWG chip and lens, wherein at one side of the metal package, a double slit that includes an upper slit and a lower slit are formed, a DC FPCB (Direct Current FPCB) extends from outside towards inside the metal package through the upper slit and is secured to a support formed on an inner surface of the upper slit, and an RF FPCB (Radio Frequency FPCB) extends from outside towards inside the metal package through the lower slit and is secured to an upper portion of the silicon carrier, and the upper slit and the lower slit of the double slit being sealed by an elastic epoxy.

Optical module

A method of operating a wavelength swept source apparatus includes generating a single mode light, and generating a basic optical comb including light rays having identical frequency differences with adjacent light rays by modulating the generated single mode light. The method further includes generating other optical combs that include the same number of light rays as that of light rays of the optical comb that has a frequency band different from that of the basic optical comb, and is distributed in a frequency band wider than that in which the basic optical comb is distributed, by modulating the light rays of the basic optical comb. The light rays of the basic optical comb and the light rays included in the other optical combs are sequentially emitted according to frequencies of the light rays of the basic optical comb and the light rays included in the other optical combs.

Method of operating wavelength swept source apparatus

Provided is an optical device. The optical device includes a substrate having a waveguide region and a mounting region, a planar lightwave circuit (PLC) waveguide including a lower-clad layer and an upper-clad layer on the waveguide region of the substrate and a platform core between the lower-clad layer and the upper-clad layer, a terrace defined by etching the lower-clad layer on the mounting region of the substrate, the terrace including an interlocking part, an optical active chip mounted on the mounting region of the substrate, the optical active chip including a chip core therein, and a chip alignment mark disposed on a mounting surface of the optical active chip. The optical active chip is aligned by interlocking between the interlocking part of the terrace and the chip alignment mark of the optical active chip and mounted on the mounting region.

Optical devices and methods of fabricating the same

Provided are structures for connecting trace lines of printed circuit boards and optical transceiver modules with the same. The module may include an optical transmitter/receiver part, a signal processing unit, a flexible PCB, and a rigid PCB. The flexible PCB may include a first signal line, and the rigid PCB may include a second signal line. The flexible PCB and the rigid PCB may be overlapped with each other. The first signal line and the second signal line may not be overlapped with each other and be electrically connected to each other by a junction soldering structure. It is possible to transmit high quality and high frequency signals through the first and second signal lines.

Structure for connecting electrical trace lines of printed circuit boards and optical transceiver module with the same

Provided is a transistor outline (TO)-CAN type optical module and an optical transmission apparatus including the same. The optical module includes a stem, a thermo-electric cooler (TEC) on the stem, a first sub-mount on the TEC, an optical element on the first sub-mount, a plurality of electrode lead wirings inserted from an outside to an inside of the stem and disposed adjacent to the TEC and the optical element, a second sub-mount between the electrode lead wirings and the optical element, radio frequency (RF) transmission lines on the second sub-mount, a plurality of bonding wires connecting the RF transmission lines and the optical element, and the RF transmission lines and the electrode lead wirings, and an impedance matching unit disposed around the RF transmission lines and the electrode lead wirings, and controlling impedances of the RF transmission lines and the electrode lead wires.

Growing community of inventors

Daejeon, South Korea

Jang Uk Shin