Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Other

Ms Autotech Co., Ltd.

Ulsan Technopark

Jang-Soo Kim

Young-Wook Lee

Hye-Young Ryu

Dong-Gyu Kim

Hyang-Shik Kong

Mun-Pyo Hong

Shi-Yul Kim

Sang-Gab Kim

Woo-Geun Lee

Jae-Hyoung Youn

Chang-Oh Jeong

Min-Seok Oh

Hong-Kee Chin

Myung-Koo Hur

Chi-Woo Kim

Hong-Suk Yoo

Yang-Sun Kim

Young-Jae Tak

Chun-Gi You

Sang-Soo Kim

Bum-Ki Baek

Jin-Oh Kwag

Jong-Soo Yoon

Hwa-Yeul Oh

Young-Hoon Yoo

Jong-in Kim

Jong-In Kim

Su-Hyoung Kang

Yong-Hwan Kim

Byung-Duk Yang

Sung-Wook Huh

Kyoung-Tai Han

Sang-Hee Jang

Sung-Man Kim

Ki-Hun Jeong

Yu-Gwang Jeong

Kyoung-Ju Shin

Woon-Yong Park

Ki-Won Kim

Sung-Hoon Yang

Jin-Ho Ju

Il-Gon Kim

Seung-Ha Choi

Kap-Soo Yoon

Kyung-Wook Kim

Shin-Il Choi

Young-Goo Song

Kyung-Sook Jeon

Young-Sun Kim

Seung-Hwan Shim

Hyeon-Hwan Kim

Sang-Woo Whangbo

Ho-Joon Lee

Cheol-Soo Jung

Seog-Chae Lee

Bung-Hyuk Min

Hong-Sick Park

Seung-Soo Baek

Jae-Ho Choi

Bong-Kyun Kim

Jong-Hyun Choung

Byeong-Beom Kim

Byeong-Jin Lee

Sun-Young Hong

Min-Wook Park

Yang-Ho Bae

Pil-Sang Yun

Sang-Jin Jeon

Hee-Hwan Choe

Kyung-Eun Lee

Nam-Seok Suh

Hong-Long Ning

Chong-Chul Chai

Hoon Jong Kang

Sang-Ho Kim

Jeong-Min Park

Sang-Hun Lee

Mee-Hye Jung

Jeong-Ho Lee

Min Hyuck Kang

Seong-Young Lee

Hi-Kuk Lee

Gug-Rae Jo

Dong-Yoon Kim

Young-Je Cho

Byoung-Joo Kim

Se-Hwan Yu

Eun-Guk Lee

Sang-Ki Kwak

Doo-Hwan You

Jang-Sub Kim

Yoon-Ho Kang

Kang-Woo Kim

Min-Uk Kim

In-Ho Park

Youn-Hak Jeong

Soo-Jin Kim

Joo-Han Kim

Se-Ah Kwon

Cheon-Jae Maeng

A thin film transistor array panel includes a substrate; a plurality of gate lines that are formed on the substrate; a plurality of data lines that intersect the gate lines; a plurality of thin film transistors that are connected to the gate lines and the data lines; a plurality of color filters that are formed on upper parts of the gate lines, the data lines, and the thin film transistors; a common electrode that is formed on the color filters and that includes a transparent conductor; a passivation layer that is formed on an upper part of the common electrode; and a plurality of pixel electrodes that are formed on an upper part of the passivation layer and that are connected to a drain electrode of each of the thin film transistors.

Thin film transistor array panel and a method for manufacturing the same

The invention discloses a press die for electrically assisted manufacturing performing plastic working at a relatively lower temperature than hot working by using an electroplasticity effect that a flow stress inside a material is reduced when a current is applied to the material, the press die for electrically assisted manufacturing including: an upper die and a lower die configured to be disposed at upper and lower portions, having the material disposed therebetween; and at least one electrode pair configured to be disposed in the upper die or the lower die, wherein the electrode pair is configured so that electrodes having different polarities in a width direction of the material face each other.

Press die for electrically assisted manufacturing

A thin film transistor ('TFT') array panel includes; an insulation substrate, a TFT disposed on the insulation substrate and including a drain electrode, a passivation layer covering the TFT and including a contact portion disposed therein corresponding to the drain electrode, a partition comprising an organic material disposed on the passivation layer, and including a transverse portion, a longitudinal portion, and a contact portion disposed on the drain electrode, a color filter disposed on the passivation layer and disposed in a region defined by the partition, an organic capping layer disposed on the partition and the color filter, and a pixel electrode disposed on the organic capping layer, and connected to the drain electrode through the contact portion of the passivation layer and the contact portion of the partition, wherein a contact hole is formed in the organic capping layer corresponding to the contact portion of the passivation layer.

Thin film transistor array panel and manufacturing method of the same

A thin film transistor array panel includes a substrate; a plurality of gate lines that are formed on the substrate; a plurality of data lines that intersect the gate lines; a plurality of thin film transistors that are connected to the gate lines and the data lines; a plurality of color filters that are formed on upper parts of the gate lines, the data lines, and the thin film. transistors; a common electrode that is formed on the color filters and that includes a transparent conductor; a passivation layer that is formed on an upper part of the common electrode; and a plurality of pixel electrodes that are formed on an upper part of the passivation layer and that are connected to a drain electrode of each of the thin film transistors.

In one embodiment, a display panel includes a substrate and a gate driver disposed on the substrate. The gate driver comprises a wiring unit which receives signals and a circuit unit which outputs driving signals in response to the signals received from the wiring unit. The circuit unit comprises a shift register and a shift register wiring connected to the shift register. The wiring unit comprises first through n-th signal lines (n is a natural number greater than two) arranged sequentially adjacent to the shift register. The first line is located farthest from the shift register and the n-th signal line is closest from the shift register. Further, the first signal line is electrically connected to the shift register by a first connection line that comprises a first contact portion connected to the first signal line and a second contact portion connected to the shift resistor wiring.

Display panel having static electricity protection

A display panel includes a first substrate, a second substrate and a spacer disposed there between. The second substrate includes a black matrix pattern, a color filter, a dummy color filter and a common electrode. The black matrix pattern is formed with an opening portion which is filled by the color filter. The dummy color filter is made of same material as the color filter and extends in a vertical direction along which the spacer also extends. The spacer is formed between the first substrate and the second substrate in correspondence with location of the dummy color filter so that the effective spaced apart distance that the spacer provides between the first and second substrates is a function of a thickness of the dummy color filter.

Display panel comprising a black matrix with a recessed portion, a color filter having a first thickness, and a dummy color filter having a second thickness

Embodiments of the present invention relate to a thin film transistor and a manufacturing method of a display panel, and include forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an intrinsic semiconductor on the gate insulating layer, forming an extrinsic semiconductor on the intrinsic semiconductor, forming a data line including a source electrode and a drain electrode on the extrinsic semiconductor, and plasma-treating a portion of the extrinsic semiconductor between the source electrode and the drain electrode to form a protection member and ohmic contacts on respective sides of the protection member. Accordingly, the process for etching the extrinsic semiconductor and forming an inorganic insulating layer for protecting the intrinsic semiconductor may be omitted such that the manufacturing process of the display panel may be simplified, manufacturing cost may be reduced, and productivity may be improved.

Method for manufacturing a display panel

Exemplary embodiments of the present invention disclose a liquid crystal display (LCD) and a method of manufacturing the same. The LCD may have a display area and a peripheral area. An organic layer of the peripheral area may be patterned using a half-tone mask, and a protrusion member may be formed in the peripheral area. Accordingly, the thin film transistor array panel and the corresponding substrate may be prevented from being temporary adhered in the peripheral area such that the density of the liquid crystal molecules filled in the peripheral area may be uniformly maintained and the display quality of the liquid crystal display may be improved.

Liquid crystal display and manufacturing method thereof

The present invention relates to a liquid crystal display. The liquid crystal display has a lower panel including a first pixel area having a first pixel electrode and a first light leakage preventing member, a final pixel area having a second pixel electrode and a second light leakage preventing member, and middle pixel areas disposed between the first pixel area and the final pixel area, each of the middle pixel areas including a first middle pixel electrode and a second middle pixel electrode. Accordingly, light leakage may be effectively prevented at the first pixel area and the final pixel area that are disposed on the edge.

Liquid crystal display device

Thin film transistor having improved manufacturability and method for manufacturing a display panel containing same

Growing community of inventors

Yongin-si, South Korea

Jang-Soo Kim