International Business Machines Corporation

Globalfoundries Inc.

Jang Sim

Jonathan R Fry

Yongchun Xin

Daniel Piper

Cheng-Yi Lin

Dureseti Chidambarrao

Shreesh Narasimha

Junjing Bao

Viorel C Ontalus

Karen A Nummy

Yunsheng Song

Sameer Hemchand Jain

Zhigang Song

Elnatan Mataev

Bharat Biyani

Cheng-Tin Luo

Adam Yang

Choong Ho Lee

A method for production analysis includes: receiving production data at a processor from a plurality of tools spatially arranged within a manufacturing facility; creating a hierarchal topology of the data in the processor, wherein each level of the hierarchal topology is based on a different one of a plurality of static parameters that are selected from a list consisting of: a tool identifier, a batch identifier, and a spatial orientation; displaying, at a user interface implemented by the processor, a first analysis of a first level of the hierarchal topology, wherein the analysis contains parameters related to other levels of the hierarchal topology; receiving, via the user interface, a selection by a user of a first parameter displayed on the first analysis; and updating the user interface to display a second analysis of a second level of the hierarchal topology that is related to the first parameter.

Exploratory data interface

A micro electrical mechanical system (MEMS) valve is provided. The MEMS valve includes first and second bodies, a medium and a thermal element. The first body defines a first channel and a second channel intersecting the first channel. The second body defines a third channel and is movable within the first channel between first and second positions. When the second body is at the first positions, the second and third channels align and permit flow through the second and third channels. When the second body is at the second positions, the second and third channels misalign and inhibit flow through the second channel. The medium is charged into the first channel at opposite sides of the second body. The thermal element is proximate to the first channel and is operable to cause the medium to drive movements of the second body to the first or the second positions.

Micro electrical mechanical system (MEMS) valve

Microfluidic chips incorporating liquid level sensors for precise sensing of liquid levels in microfluidic system structures, e.g., channels, cavities or reservoirs without moving parts. The microfluidic system uses liquid level photosensors and use optical properties to measure liquid volumes. A light coupling emitter or waveguide transmits the light toward the fluid channel at a critical angle. Multiple light coupling emitters and photosensor array can detect light for a variety of scenarios (based on fluid refraction index) and exploit the phenomenon of critical angles to measure exact angles of reflection/refraction. The waveguide coupler(s) and photosensors are manufactured at the microscale, and use both reflected light and refracted light as monitor signals. A feedback control system (e.g., compensating for rate and tolerance drift) is devised using signals generated by the sensors upon detecting reflected or refracted sensed light for increased accuracy of detecting precise amounts of fluid volumes being dispensed.

MEMS optical liquid level sensor

A MEMS multiplexing system including: first and second fluid inputs; and a mixing network. The mixing network including: a first channel to receive the first fluid input; a second channel to receive the second fluid input; a multiplexing valve communicating with the first channel and the second channel, the multiplexing valve to cause the transport of the first fluid into the second channel so as to form a first interleaved fluid downstream from the multiplexing valve in the second channel and to cause the transport of the second fluid into the first channel so as to form a second interleaved fluid downstream from the multiplexing valve in the first channel; and the first channel and the second channel intersecting downstream from the valve so as to force mixing of the first interleaved fluid and the second interleaved fluid.

Micro electrical mechanical system (MEMS) multiplexing mixing

A reinforced vertical-NAND structure is provided. The reinforced vertical-NAND structure includes a first set of interleaved oxide and nitride layers formed into first and second vertical structures. The first vertical structure rises from a first section of a substrate and the second vertical structure rises from a second section of the substrate. The reinforced vertical-NAND structure also includes a reinforcing layer and a second set of interleaved oxide and nitride layers formed into third and fourth vertical structures. The reinforcing layer includes sheets, which are distinct and laid across respective tops of the first and second vertical structures, and bridges connecting the sheets. The third vertical structure rises from the sheet corresponding to the first vertical structure and the fourth vertical structure rises from the sheet corresponding to the second vertical structure.

Vertical memory cell with mechanical structural reinforcement

A self-cleaning sensor to determine a level of a liquid includes a tube with an interior coating and a plurality of horizontally aligned, electrically isolated, electrical contacts. The self-cleaning sensor includes the plurality of horizontally aligned, electrically isolated, electrical contacts that each terminate in an outer surface of an interior wall of the tube and are electrically connected to one or more electrical devices in a cap residing on the tube. Additionally, the self-cleaning sensor includes a float that is composed of a low density, low dielectric constant material buoyant in one or more liquids to be measured where each horizontal dimension of the float corresponds to each horizontal dimension of the tube.

Self-cleaning liquid level sensor

A micro electrical mechanical system (MEMS) optical sensor including a fluid channel having an input portion, an output portion and a curved portion positioned between the input portion and the output portion; a light source impinging on a first boundary of the curved portion and exiting from a second boundary of the curved channel; a photodetector to record a light path of refraction of the light source exiting from the second boundary of the curved portion; a processor to compute the refractive index of a fluid in the curved portion using the light path of refraction of the light source and compare the computed refractive index to a known refractive index for the fluid to determine a difference between the computed refractive index and the known refractive index.

MEMS optical sensor

A method for depositing a conductor in the via opening electronic structure removes the via bottom liner so that the conductor deposited in the via opening directly contacts the underlying conductive layer. The method includes depositing amorphous silicon over the dielectric layer and the liner layer on the via opening sidewalls and bottom. The amorphous silicon extends substantially over the entire via opening while leaving below a void within the via opening. The amorphous silicon over the via opening and on the via opening bottom and the liner layer on the via opening bottom are anisotropically etched to leave a layer of amorphous silicon over the dielectric layer and the via opening side walls. The amorphous silicon is then removed to form a via opening having a substantially open-bottom liner. The conductor is then deposited in the via opening and contacts the underlying conductive layer.

Method for manufacturing in a semiconductor device a low resistance via without a bottom liner

Embodiments of the invention provide a method of forming embedded silicon germanium (eSiGe) in source and drain regions of a p-type field-effect-transistor (pFET) through a disposable spacer process; depositing a gap-filling layer directly on the eSiGe in the source and drain regions in a first process; depositing a layer of offset spacer material on top of the gap-filling layer in a second process different from the first process; etching the offset spacer material and the gap-filling layer, thus forming a set of offset spacers and exposing the eSiGe in the source and drain regions of the pFET; and finishing formation of the pFET.

Growing community of inventors

Dutchess, NY, United States of America

Jang Sim