Other

Seung Kee Joo

Jang Sik Lee

Seung Ki Joo

Chang Wook Jeong

Eung Chul Park

Disclosed is a process for depositing an aluminum oxide thin film necessary for semiconductor devices. The process includes the steps of: subjecting a gaseous organoaluminum compound as an aluminum source in contact with a target substrate and depositing aluminum using plasma. The steps are sequentially repeated to form an aluminum thin film, and further includes the step of oxidizing the aluminum thin film using oxygen plasma. This deposition cycle is repeated to obtain an aluminum oxide thin film. The present invention uses an aluminum source containing less contaminant compared to the prior art, thus obtaining aluminum oxide of high quality. Furthermore, the temperature of the gas supply and the reactor can be lowered in relation to the prior art method to reduce costs in the fabrication of semiconductor devices.

Process for forming aluminum or aluminum oxide thin film on substrates

A method for fabricating a large single-grained ferroelectric thin film grown by selectively nucleated lateral crystallization (SNLC) using an artificial nucleation seed, a method for fabricating a ferroelectric capacitor using the same, and a method for fabricating a ferroelectric memory device using the same. The ferroelectric thin film fabrication method includes the steps of forming a first conductive layer on one side of a semiconductor substrate, by using a conductive material, forming an artificial nucleation seed in an island form adjacent a position where a ferroelectric thin film is to be formed in the upper portion of the first conductive layer, forming a ferroelectric thin film on the whole surface of the substrate including the nucleation seed, and thermally annealing the ferroelectric thin film to thereby grow the ferroelectric thin film positioned in the lateral side of the nucleation seed into a single-grained ferroelectric thin film.

Methods for fabricating large single-grained ferroelectric thin film, for fabricating ferroelectric thin film capacitor using the same, and for fabricating ferroelectric memory device using the same

A method for fabricating a ferroelectric thin film, capable of preventing degradation due to fatigue and aging of a ferroelectric thin film of PZT and enabling crystallization at a low temperature. The ferroelectric thin film fabrication method includes the steps of forming an insulation layer on one side of a semiconductor substrate, forming an electrode layer on the insulation layer, forming a ferroelectric layer on the electrode layer, and performing an ion damage processing on the ferroelectric layer using an ionized gas.

Growing community of inventors

Pusan, South Korea

Jang Sik Lee