Taiwan Semiconductor Manufacturing Comp. Ltd.

Jang-Shiang Tsai

Jyu-Horng Shieh

Chih-Yuan Ting

Yi-Nien Su

Chung-Wen Wu

Ju-Wang Hsu

Jeng-Shiou Chen

Hun-Jan Tao

Tang-Xuan Zhong

Peng-Fu Hsu

Chung-Chi Ko

Chen-Nan Yeh

Baw-Ching Perng

Methods for manufacturing semiconductor structures are provided. The method includes forming a first masking layer over a substrate and forming a second masking layer over the first masking layer. The method includes forming a photoresist pattern over the second masking layer and patterning the second masking layer through the photoresist pattern. The method further includes diminishing the photoresist pattern and patterning the second masking layer and the first masking layer through the diminished photoresist pattern. The method further includes removing the diminished photoresist pattern and patterning the semiconductor substrate through the second masking layer and the first masking layer to form a fin structure. The method further includes forming a gate structure over the fin structure.

Method for manufacturing semiconductor structure

Methods are disclosed herein for forming conductive patterns having small pitches. An exemplary method includes forming a metal line in a first dielectric layer. The metal line has a first dimension along a first direction and a second dimension along a second direction that is different than the first direction. The method includes forming a patterned mask layer having an opening that exposes a portion of the metal line along an entirety of the second dimension and etching the portion of the metal line exposed by the opening of the patterned mask layer until reaching the first dielectric layer. The metal line is thus separated into a first metal feature and a second metal feature. After removing the patterned mask layer, a barrier layer is deposited over exposed surfaces of the first metal feature and the second metal feature and a second dielectric layer is deposited over the barrier layer.

Method of preventing pattern collapse

A device includes a substrate and at least three conducting features embedded into the substrate. Each conducting feature includes a top width x and a bottom width y, such that a top and bottom width (x, y) of a first conducting feature has a dimension of (x&#x3c;y), a top and bottom width (x, y) of a second conducting feature has a dimension of (x&#x3c;y; x=y; or x&#x3e;y), and a top and bottom width (x, y) of a third conducting feature has a dimension of (x&#x3e;y). The device also includes a gap structure isolating the first and second conducting features. The gap structure can include such things as air or dielectric.

A fin field effect transistor and method of forming the same. The fin field effect transistor includes a semiconductor substrate having a fin structure and between two trenches with top portions and bottom portions. The fin field effect transistor further includes shallow trench isolations formed in the bottom portions of the trenches and a gate electrode over the fin structure and the shallow trench isolation, wherein the gate electrode is substantially perpendicular to the fin structure. The fin field effect transistor further includes a gate dielectric layer along sidewalls of the fin structure and source/drain electrode formed in the fin structure.

Fin field effect transistor and method of forming the same

A device includes a substrate and at least three conducting features embedded into the substrate. Each conducting feature includes a top width x and a bottom width y, such that a top and bottom width (x1, y1) of a first conducting feature has a dimension of (x1&#x3c;y1), a top and bottom width (x2, y2) of a second conducting feature has a dimension of (x2&#x3c;y2; x2=y2; or x2&#x3e;y2), and a top and bottom width (x3, y3) of a third conducting feature has a dimension of (x3&#x3e;y3). The device also includes a gap structure isolating the first and second conducting features. The gap structure can include such things as air or dielectric.

Method of preventing a pattern collapse

A plasma processing operation uses a gas mixture of Nand Hto both remove a photoresist film and treat a low-k dielectric material. The plasma processing operation prevents degradation of the low-k material by forming a protective layer on the low-k dielectric material. Carbon from the photoresist layer is activated and caused to complex with the low-k dielectric, maintaining a suitably high carbon content and a suitably low dielectric constant. The plasma processing operation uses a gas mixture with Hconstituting at least 10%, by volume, of the gas mixture.

Method for photoresist stripping and treatment of low-k dielectric material

A method and system for determining the dielectric constant of a low-k dielectric film on a production substrate include measuring the electronic component of the dielectric constant using an ellipsometer, measuring the ionic component of the dielectric constant using an IR spectrometer, measuring the overall dielectric constant using a microwave spectrometer and deriving the dipolar component of the dielectric constant. The measurements and determination are non-contact and may be carried out on a production device that is further processed following the measurements.

Measuring low dielectric constant film properties during processing

A plasma containing 5&#x2013;10% oxygen and 90&#x2013;95% of an inert gas strips photoresist from over a low-k dielectric material formed on or in a semiconductor device. The inert gas may be nitrogen, hydrogen, or a combination thereof, or it may include at least one of nitrogen, hydrogen, NH, Ar, He, and CF. The operating pressure of the plasma may range from 1 millitorr to 150 millitor. The plasma removes photoresist, the hard skin formed on photoresist during aggressive etch processes, and polymeric depositions formed during etch processes. The plasma strips photoresist at a rate sufficiently high for production use and does not appreciably attack carbon-containing low-k dielectric materials. An apparatus including a plasma tool containing a semiconductor substrate and the low oxygen-content plasma, is also provided.

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Zhubei, Taiwan

Jang-Shiang Tsai