Sk Enpulse Co., Ltd.

Jang Kuk Kwon

Seung Chul Hong

Deok Su Han

Han Teo Park

Kyu Hun Kim

Provided is a polishing composition for a semiconductor process comprising abrasive particles, the abrasive particles containing an amine-based polishing rate improver, and comprising the amine-based polishing rate improver. Provided is a polishing composition for a semiconductor process further comprising an amine-based surface modifier around the surface of the abrasive particles, wherein the sum of the content of an amine group contained in the amine-based polishing rate improver and the content of an amine group contained in the amine-based surface modifier is 0.0185% by weight or more based on the total composition weight. The polishing composition for a semiconductor process may implement the polishing rate and defect prevention performance within a target range in polishing the boron-doped polysilicon layer.

Polishing pad and method for manufacturing semiconductor device using same

The present invention relates to a polishing composition for a semiconductor process, a method of preparing the polishing composition, and a method of fabricating a semiconductor device using the polishing composition. The polishing composition for a semiconductor process contains abrasive particles, an accelerator, and a stabilizer. The polishing composition has excellent long-term storage stability because the particles contained therein do not aggregate even after the polishing composition is stored at 60° C. or higher for a long time. In addition, the polishing composition may be applied to a process of polishing an amorphous carbon layer, may exhibit a high removal rate, prevent carbon residue generated during the polishing process from being adsorbed onto a semiconductor substrate, and prevent contamination of a polishing pad. The present invention may also provide a method of fabricating a semiconductor device using the polishing composition for a semiconductor process.

Polishing composition for semiconductor processing polishing composition preparation method, and semiconductor device manufacturing method to which polishing composition is applied

The present disclosure relates to a polishing composition for a semiconductor process that may increase a polishing rate of a boron-doped polysilicon layer, improve polishing selectivity, prevent a defect of a wafer that may occur in a polishing process, and improving surface roughness of the wafer, and a method for polishing a substrate by using the same. In addition, the present disclosure relates to a method for manufacturing a polished substrate by using a polishing composition for a semiconductor process.

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Seoul, South Korea

Jang Kuk Kwon