Hansol Chemical Co., Ltd.

Yonsei University

Jang-Hyeon Seok

Jung-Woo Park

Hyo-Suk Kim

Jung Park

Ki-Yeung Mun

Eun-Jeong Cho

Yu-Jin Lee

Hyung-jun Kim

Mi-Ra Park

Kyu-Hyun Yeom

Hyun-Kee Kim

Cheol-Wan Park

Ee-Seul Shin

Jin-Hyung Seo

Jae-Seok An

Jung-Wun Hwang

Ming-Sung Park

Tae-Wook Nam

Jong-Ryul Park

Jun-Won Lee

Min-Hyuk Nim

Min-Sung Park

Ju-Won Lee

The present disclosure relates to a novel Group 4 metal element-containing compound having excellent thermal stability, a precursor composition including the compound, and a method for manufacturing a thin film using the precursor composition. The novel Group 4 metal element-containing compound according to the present disclosure and the vapor deposition precursor composition including the compound can have excellent thermal stability, realize thin film deposition in a wide temperature range, and reduce residues caused by heat loss, thereby preventing side reactions in a process. Additionally, the vapor deposition precursor composition according to the present disclosure can realize uniform thin film deposition, thereby securing excellent physical properties of the thin film.

Group 4 metal element-containing compound, precursor composition including same, and method for manufacturing thin film using same

The present invention relates to a method for producing a high yield of an organometallic compound including a step of allowing a metal hexacarbonyl compound to react with a hexahydro-1,3,5-triazine compound, and a thin film having excellent properties, fabricated by depositing the produced organometallic compound.

Method for producing organometallic compound and thin film fabricated using organometallic compound obtained thereby

The present invention relates to a vapor deposition compound enabling thin-film deposition through vapor deposition, and particularly to nickel and cobalt precursors capable of being applied to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and having superior thermal stability and reactivity, and a method of preparing the same.

Vapor deposition precursor having excellent thermal stability and reactivity and preparing method therefor

The present invention relates to precursor compounds, and more particularly to nonpyrophoric precursor compounds suitable for use in thin film deposition through atomic layer deposition (ALD) or chemical vapor deposition (CVD), and to an ALD/CVD process using the same.

Precursor compounds for atomic layer deposition (ALD) and chemical vapor deposition (CVD) and ALD/CVD process using the same

The present invention relates to a compound that is capable of being used in thin-film deposition using vapor deposition. Particularly, the present invention relates to a rare earth compound, which is capable of being applied to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and which has excellent thermal stability and reactivity, a rare earth precursor including the same, a method of manufacturing the same, and a method of forming a thin film using the same.

Rare earth precursor, method of manufacturing same and method of forming thin film using same

The present invention relates to a vapor deposition compound enabling thin-film deposition through vapor deposition, and more particularly to a novel cobalt precursor, which can be applied to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and exhibits superior reactivity, volatility and thermal stability, a method of preparing the same and a method of manufacturing a thin film using the same.

Cobalt precursor, method of preparing same and method of manufacturing thin film using same

The present invention relates to a vapor deposition compound capable of thin film deposition through vapor deposition, and particularly to a silicon precursor capable of being applied to ALD or CVD, and specifically, enabling high temperature deposition, and a method of manufacturing a silicon-containing thin film.

Silicon precursor and method of manufacturing silicon-containing thin film using the same

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Sejong-si, South Korea

Jang-Hyeon Seok