Dnf Co., Ltd.

Jang Hyeon Seok

Sang Ick Lee

Myong Woon Kim

Se Jin Jang

Sung Gi Kim

Jong Hyun Kim

Byeong-il Yang

Sang-Do Lee

Do Yeon Kim

Sang Yong Jeon

Byeong Il Yang

Sang Do Lee

Provided are a novel trisilyl amine derivative, a method for preparing the same, and a silicon-containing thin film using the same, wherein the trisilyl amine derivative, which is a compound having thermal stability, high volatility, and high reactivity and being present in a liquid state at room temperature and under pressure where handling is possible, may form a high purity silicon-containing thin film having excellent physical and electrical properties by various deposition methods.

Trisilyl amine derivative, method for preparing the same and silicon-containing thin film using the same

Provided are a novel amino-silyl amine compound and a manufacturing method of a dielectric film containing Si&#x2014;N bond using the same. Since the amino-silyl amine compound according to the present invention, which is a thermally stable and highly volatile compound, may be treated at room temperature and used as a liquid state compound at room temperature and pressure, the present invention provides a manufacturing method of a high purity dielectric film containing a Si&#x2014;N bond even at a low temperature and plasma condition by using atomic layer deposition (PEALD).

Amino-silyl amine compound and the manufacturing method of dielectric film containing Si&#x2014;N bond by using atomic layer deposition

Provided are a novel cyclodisilazane derivative, a method for preparing the same, and a silicon-containing thin film using the same, wherein the cyclodisilazane derivative having thermal stability, high volatility, and high reactivity and being present in a liquid state at room temperature and under a pressure where handling is easy, may form a high purity silicon-containing thin film having excellent physical and electrical properties by various deposition methods.

Cyclodisilazane derivative, method for preparing the same and silicon-containing thin film using the same

Provided are a novel amino-silyl amine compound, a method for preparing the same, and a silicon-containing thin-film using the same, wherein the amino-silyl amine compound has thermal stability and high volatility and is maintained in a liquid state at room temperature and under a pressure where handling is easy to thereby form a silicon-containing thin-film having high purity and excellent physical and electrical properties by various deposition methods.

Amino-silyl amine compound, method for preparing the same and silicon-containing thin-film using the same

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Daejeon, South Korea

Jang Hyeon Seok