Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Jang Ho Lee

Jong Min Baek

Woo Kyung You

Sung Jin Kang

Kyu-Hee Han

Sang Shin Jang

Han Seong Kim

Young Moon Kim

Han Bit Kim

Jai Ku Shin

Young Do Kim

Han Sun Ryou

Young Gil Park

Eui Bok Lee

Na Ri Ahn

Sang Hoon Ahn

Young Eun Oh

Sung Guk An

Hung Kun Ahn

Jun Su Park

Deok Young Jung

Kyung Lae Rho

Kicheol Song

Hyeok Sang Oh

So Dam Ahn

Ji Hye Seo

Ki Cheol Song

Su Hyun Bark

Jun Hyuk Lim

Young-Sang Park

Kyou Jong Park

Jeong Chul Ho

There is provided a semiconductor device including an etching stop film which is placed disposed on a substrate; an interlayer insulating film which is disposed on the etching stop film; a trench which penetrates the interlayer insulating film and the etching stop film; a spacer which extends along side walls of the trench; a barrier film which extends along the spacer and a bottom surface of the trench; and a filling film which fills the trench on the barrier film. The trench includes a first trench and a second trench which are spaced apart from each other in a first direction and have different widths from each other in the first direction. A bottom surface of the second trench is placed disposed below a bottom surface of the first trench.

Semiconductor device

A semiconductor device including a first interlayer insulating film; a conductive pattern in the first interlayer insulating film; a resistance pattern on the conductive pattern; an upper etching stopper film spaced apart from the resistance pattern, extending in parallel with a top surface of the resistance pattern, and including a first metal; a lower etching stopper film on the conductive pattern, extending in parallel with a top surface of the first interlayer insulating film, and including a second metal; and a second interlayer insulating film on the upper etching stopper film and the lower etching stopper film, wherein a distance from a top surface of the second interlayer insulating film to a top surface of the upper etching stopper film is smaller than a distance from the top surface of the second interlayer insulating film to a top surface of the lower etching stopper film.

A protective window includes a flexible base film and a hard coating layer disposed on the flexible base film. The hard coating layer includes a silicone leveling agent and an inorganic antistatic agent. The coating layer includes an upper area and a lower area disposed between the upper area and the flexible base film, and a density of the inorganic antistatic agent in the lower area is greater than a density of the inorganic antistatic agent in the upper area.

Protective window including a hard coating layer and flexible display device including the same

A display device includes a display panel including a front surface and a second surface which is opposite to the front surface; a front laminated structure attached to the front surface of the display panel; and a rear laminated structure attached to the second surface of the display panel. Each of the front laminated structure and the rear laminated structure includes a bonding member, and an average modulus of the bonding member of the front laminated structure is smaller than an average modulus of the bonding member of the rear laminated structure.

Display device including bonding member

Semiconductor device and method of fabricating the same

A protection film for an electronic device includes an adhesive layer including a first surface to which an electronic device is attached, and a film layer which contacts a second surface of the adhesive layer and includes at least one member, where a thickness of the adhesive layer satisfies Inequality 1:&#x2264;(5.1+57.4)&#xb7;ln()&#x2212;(14.7+140.5)

Protection film and electronic device including the same

A semiconductor device is provided. The semiconductor device includes a substrate comprising a lower wire, an etch stop layer on the substrate, an interlayer insulating layer on the etch stop layer, an upper wire disposed in the interlayer insulating layer and separated from the lower wire and a via formed in the interlayer insulating layer and the etch stop layer and connecting the lower wire with the upper wire, wherein the via comprises a first portion in the etch stop layer and a second portion in the interlayer insulating layer, and wherein a sidewall of the first portion of the via increases stepwise.

Growing community of inventors

Hwaseong-si, South Korea

Jang Ho Lee