Samsung Electronics Co., Ltd.

Handan Broadinfocom Co., Ltd.

Jang-Hee Lee

Gil-heyun Choi

Chil-Youl Yang

Myoung-Hwan Lee

Seong-Hee Park

Byung-Hee Kim

Hee-Sook Park

Jae-Eun Kang

Jae-Hwa Park

Tae-Young Lee

Bong-Jhin Shin

Chun-Ho Lee

Han-Su Kang

Sung-Il Park

Dong-Chan Lim

Byung-Hak Lee

Chang-Won Lee

Woong-Hee Sohn

Hyun-Su Kim

Sang-Hoon Ahn

Sun-Pil Youn

Kyu-Hee Han

Dae-Yong Kim

Woong-hee Sohn

Kyoung-Hee Kim

Geun-O Jeong

Soyoung Lee

Min-sang Song

Jong-Ryeol Yoo

Kwang-jin Moon

Eun-Ok Lee

Ik Soo Kim

Jongwon Hong

Hyunjae Lee

Eun-ji Jung

Dae-yong Kim

Kee-Young Jun

Kaoru Yamamoto

Joong-Jeh Park

Ki-Won Jeong

Min-Gu Kim

Yong-Kook Lee

Sung-Joo An

Jong-min Beak

Sang-Woo Lee

Yoon-Young Kim

Byung-Lyul Park

Chang-Hyun Kim

Jongmin Baek

Hyeon-jin Shin

Kwang-Jin Moon

Sung-il Park

Ik-Soo Kim

Eun-Ji Jung

Sung-Ho Cho

Jong-Min Baek

Gilheyun Choi

Kyung-Whoon Cheun

Chang-Seok Lee

Hyun-Jae Song

Sang-Don Nam

Jeong-Tae Kim

Jeon-Il Lee

Tae-Ho Cha

Jeong-gil Lee

Byung-Iyul Park

Hee-Su Kim

Kwang-Hoon Han

Yo-Hyun Song

Jung-soo Yoon

Geum-Jung Seong

Minjong Kim

Jae-Eok Shim

Jae-Hoon Lim

Chi-Seong Oh

Hyun-soo Kim

Eun-ok Lee

Sun-Pil Yun

Keun-Wook Shin

Han-Joo Yoo

Kyong-Jun Baek

Young-Rak Kim

Joong-Yeob Kim

Se-Ran Oh

Seong-Gil Park

Han Kyu-hee

Provided are a precursor supply unit, a substrate processing system, and a method of fabricating a semiconductor device using the same. The precursor supply unit may include an outer container, an inner container provided in the outer container and used to store a precursor source, a gas injection line having an injection port, which is provided below the inner container and in the outer container and is used to provide a carrier gas into the outer container, and a gas exhaust line having an exhaust port, which is provided below the inner container and in the outer container and is used to exhaust the carrier gas in the outer container and a precursor produced from the precursor source.

Precursor supply unit, substrate processing system, and method of fabricating semiconductor device using the same

A semiconductor manufacturing apparatus includes a process chamber. An insulating plate divides an interior space of the process chamber into a first space and a second space and thermally isolates the first space from the second space. A gas supplier is configured to supply a process gas to the first space. A radiator is configured to heat the first space. A stage is disposed within the second space and the stage is configured to support a substrate.

Semiconductor manufacturing apparatus having an insulating plate

In a plasma deposition method, a substrate is loaded onto a substrate stage within a chamber. A first plasma is generated at a region separated from the substrate by a first distance. A first process gas is supplied to the first plasma region to perform a pre-treatment process on the substrate. A second plasma is generated at a region separated from the substrate by a second distance different from the first distance. A second process gas is supplied to the second plasma region to perform a deposition process on the substrate.

Plasma deposition method, plasma deposition apparatus and method of manufacturing semiconductor device

Disclosed is a method by which a transmission device transmits data on the basis of a sound signal in a wireless communication system, the method including transmitting a sound packet corresponding to transmission data, with the sound packet including at least one sound symbol, the sound symbol including at least one sound sub-symbol, a plurality of sound symbol types are supported in the wireless communication system, and each of the plurality of sound symbol types is mapped to a preset data value.

Device and method for transmitting and receiving data on basis of sound signal in wireless communication system

A method of manufacturing a semiconductor device includes forming an etch target layer on a substrate; forming an amorphous metal layer on the etch target layer, the amorphous metal layer comprising nitrogen between 15 atomic percentage (at %) and 25 at %; forming an amorphous metal hardmask by patterning the amorphous metal layer; and etching the etch target layer by using the amorphous metal hardmask as an etching mask.

Method of manufacturing metal hardmask and semiconductor device

According to an embodiment of the present disclosure, a method for operating an electronic device includes displaying a result of recognizing at least one other electronic device as at least one item, and sending a message requesting the at least one other electronic device to output an identifiable signal.

Apparatus and method for controlling other electronic device in electronic device

A method to transmit and receive a packet in a bridge of a communication system is provided. The method includes receiving a first packet from a first network. The method also includes converting a medium access control (MAC) layer source address of the received first packet into a MAC address of the bridge. The method further includes transmitting the address-converted first packet to a node of a second network.

Method and apparatus for relaying packet transmission and updating network address information in communication system

The present invention defines a share group, and enables a content generated during an activity period to be automatically shared in the share group during the activity period. According to an embodiment of the present invention, an automatic content share method comprises, in a content share method, the steps of: setting a share group to share the content, an activity and an activity period; and sharing the generated content on the basis of the share group to share the content, the activity and the activity period, wherein the share group is formed on the basis of a proximity discovery.

Automatic content share method and device

A deposition apparatus includes a chuck in a process chamber, the chuck having a top surface on which a substrate is loaded, a showerhead disposed over the chuck, and a fence extension disposed in the process chamber. Plasma is generated in a space between the showerhead and the loaded substrate during a deposition process. The fence extension at least partially confines the plasma in the space during the deposition process, thereby enabling improved thickness uniformity and reliability of a layer deposited on the loaded substrate during the deposition process.

Plasma-enhanced chemical vapor deposition (PE-CVD) apparatus and method of operating the same

The present disclosure relates to a sensor network, Machine Type Communication (MTC), Machine-to-Machine (M2M) communication, and technology for Internet of Things (IoT). The present disclosure may be applied to intelligent services based on the above technologies, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. An electronic device, a method of an electronic device, and a method of a terminal apparatus are provided. The electronic device includes a first module configured to transmit/receive a signal through a first transmission interface, a second module configured to transmit/receive a signal through a second transmission interface, and a controller configured to set a channel for transmitting/receiving a signal to/from an other electronic device through the second transmission interface, based on a quality of at least one channel transmitting/receiving a signal to/from the other electronic device through the first transmission interface.

Method for selecting channel and an electronic device thereof

The present disclosure relates to a sensor network, Machine Type Communication (MTC), Machine-to-Machine (M2M) communication, and technology for Internet of Things (IoT). The present disclosure may be applied to intelligent services based on the above technologies, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. An electronic device for and a method of performing wireless communication are provided. The electronic device includes a first module configured to transmit signals to another electronic device via a first type of link; a second module configured to transmit signals to the another electronic device via a second type of link; and a controller configured to establish the first type of link and release from the second type of link if a predetermined event occurs.

Apparatus and method for auto link change in wireless communication device

A method of an electronic device and a method of a server are provided. The method of the electronic device includes receiving a broadcast signal broadcast by another electronic device via a wireless communication; determining, based on the received broadcast signal, a number of times the another electronic device has been detected; and sending a request for information to the another electronic device, based on the determined number of times the another electronic device has been detected. The method of the server includes receiving information from a first electronic device; receiving, from a second electronic device, an information request message relating to the first electronic device which has been detected a threshold number of times or more by the second electronic device; and transmitting information registered by the first electronic device to the second electronic device.

Method for collecting information by electronic device and electronic device therefor

Semiconductor devices, and methods of fabricating the same, include first conductive lines on a substrate, and a first molding layer covering the first conductive lines. The first conductive lines have air gaps between adjacent first conductive lines. Sidewalls of the first conductive lines and a bottom surface of the first molding layer collectively define a first gap region of each of the air gaps. The sidewalls of the first conductive lines and a top surface of the first molding layer collectively define a second air gap region of each of the air gaps.

Semiconductor devices and methods of fabricating the same

Growing community of inventors

Yongin-si, South Korea

Jang-Hee Lee