Skhynix Inc.

Jang Hee Jung

Sung Wook Jung

Ji Hui Baek

Kyung Bo Kim

A semiconductor memory device includes an electrode structure including a plurality of gate conductive films stacked on a substrate and a channel array in which a plurality of channel columns passing through the electrode structure are arranged in a second direction. The plurality of channel columns may include a first column whose uppermost plane has a first shape and a second column whose uppermost plane has a second shape. N (N is a natural number equal to more than 1) first columns and N second columns are alternately arranged in a first direction different from the second direction.

Semiconductor memory device

The present disclosure provides a semiconductor device with a structural stability. The semiconductor device includes a stack of vertical alterations of conductive layers and insulating layers; supports passing through the stack, each of the supports having a cross-section of an equilateral polygon, the supports being equidistantly arranged in a first direction and a second direction, the first and second directions crossing each other; and contact plugs electrically coupled respectively to the conductive layers, each of the contact plugs being disposed between at least two adjacent supports of the supports.

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Seoul, South Korea

Jang Hee Jung