Samsung Electronics Co., Ltd.

Jang Eun Lee

Woo Chang Lim

Sang Hwan Park

Jeong Heon Park

Se Chung Oh

Xueti Tang

Sechung Oh

Young Hyun Kim

Vladimir Nikitin

Mohamad Towfik Krounbi

Dmytro Apalkov

Woojin Kim

Young Dug Kim

Alexey Vasilyevitch Khvalkovskiy

Ki Woong Kim

Woo Jin Kim

Kyoung Sun Kim

A method for providing a dual magnetic junction usable in a magnetic device and the dual magnetic junction are described. First and second nonmagnetic spacer layers, a free layer and pinned are provided. The first pinned layer, free layer and nonmagnetic spacer layer may be annealed at an anneal temperature of at least three hundred fifty degrees Celsius before a second pinned layer is provided. The second pinned layer may include Co, Fe and Tb. The nonmagnetic spacer layers are between the pinned layers and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

Dual perpendicular magnetic anisotropy magnetic junction usable in spin transfer torque magnetic random access memory applications

Provided is a magnetic tunneling junction device including a first structure including a magnetic layer; a second structure including at least two extrinsic perpendicular magnetization structures, each including a magnetic layer and; a perpendicular magnetization inducing layer on the magnetic layer; and a tunnel barrier between the first and second structures.

Magnetic tunneling junction devices, memories, memory systems, and electronic devices

A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a pinned layer and nonmagnetic spacer layer between the free and pinned layers. The free layer includes at least one of a hybrid perpendicular magnetic anisotropy (PMA) structure and tetragonal bulk perpendicular magnetic anisotropy (B-PMA) structure. At least one of the free layer and the pinned layer have a perpendicular magnetic anisotropy energy greater than an out-of-plane demagnetization energy. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

Method and system for providing a bulk perpendicular magnetic anisotropy free layer in a perpendicular magnetic junction usable in spin transfer torque magnetic random access memory applications

Provided is a magnetic tunneling junction device including a fixed magnetic structure; a free magnetic structure; and a tunnel barrier between the fixed magnetic structure and the free magnetic structure, at least one of the fixed magnetic structure and the free magnetic structure including a perpendicular magnetization preserving layer, a magnetic layer between the perpendicular magnetization preserving layer and the tunnel barrier, and a perpendicular magnetization inducing layer between the perpendicular magnetization preserving layer and the magnetic layer.

Magnetic tunneling junction devices, memories, electronic systems, and memory systems, and methods of fabricating the same

A method and system for setting the direction of pinned layers in a magnetic junction are described. In one aspect, a magnetic field greater than the coercivity of the layers in a pinned layer but less than the coupling field between the layers is applied. In another aspect the pinned layers are switched from an anti-dual state to a dual state using a spin transfer torque current. In another aspect, a magnetic junction having a partial perpendicular anisotropy (PPMA) layer in the pinned layer is provided. In some aspects, the PPMA layer is part of a synthetic antiferromagnetic structure. In some embodiments, a decoupling layer is provided between the PPMA layer and another ferromagnetic layer in the pinned layer.

Method and system for setting a pinned layer in a magnetic tunneling junction

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Cupertino, CA, United States of America

Jang Eun Lee