Taiwan Semiconductor Manufacturing Comp. Ltd.

Jang-Cheng Hsieh

Chung-Te Lin

Chung-Cheng Wu

Kuo-Ching Huang

Chwen-Ming Liu

Su-Yu Yeh

Jenn-Ming Huang

Chin-Te Huang

Ji-Chung Huang

Hsien-Wei Chin

Jih-Hwa Wang

Jun-Yang Lai

Meng-Shiun Shieh

Chou-Jie Tsai

Huan-Chung You

A method for forming lining oxide in an opening for a shallow trench isolation and a method for forming a shallow trench isolation incorporating a lining oxide layer are described. In the method for forming lining oxide, a silicon substrate is first provided, followed by a process of forming a pad oxide layer and a silicon nitride mask sequentially on top of the silicon substrate. A trench opening is then patterned and formed in the silicon substrate for the shallow trench isolation. The silicon substrate is then annealed at a temperature of at least 1,000&deg; C. in a furnace in an environment that contains not more than 10 vol. % oxygen. A lining oxide layer is formed in the same furnace used for annealing the structure of the trench opening in the silicon substrate.

Method for forming lining oxide in shallow trench isolation incorporating pre-annealing step

Within a method for fabricating a microelectronic fabrication there is first provided a substrate. There is then formed over the substrate a microelectronic device. There is then formed over the microelectronic device a passivating dielectric layer formed from a passivating dielectric material selected from the group consisting of fluorosilicate glass (FSG) passivating dielectric materials, atmospheric pressure chemical vapor deposited (APCVD) passivating dielectric materials, subatmospheric pressure chemical vapor deposited (SACVD) passivating dielectric materials and spin-on-glass (SOG) passivating dielectric materials to form from the microelectronic device a passivated microelectronic device. Finally, there is then annealed thermally, while employing a thermal annealing method employing an atmosphere comprising hydrogen, the passivated microelectronic device to form a stabilized passivated microelectronic device. The method is a &ldquo;pure H,(100%)&rdquo; alloy recipe to use after contact opening or metal-1 formation.

Hydrogen thermal annealing method for stabilizing microelectronic devices

A method is provided for improving the performance characteristics of the MOS devices contained within an integrated circuit that has been subjected to a rapid thermal anneal. After the rapid thermal anneal the integrated circuit is heated for more than about 30 minutes at a temperature of more than about 430.degree. C. in a gaseous atmosphere that contains hydrogen, typically forming gas.

Method for a MOS device manufacturing

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Hsin-Chu, Taiwan

Jang-Cheng Hsieh