At&t Bell Laboratories

Bell Telephone Laboratories

Janet L Benton

Ya-Hong Xie

Lionel C Kimerling

Renuka P Jindal

Jurgen Michel

John Milo Poate

Harry John Leamy

Dale C Jacobson

Charles J Doherty

An integrated photodiode is formed by providing a silicon substrate with a deep recessed tub in excess of about 20 microns, forming an isolated p-n junction on the peripheral tub surfaces, and selectively epitaxially filling the tub with intrinsic silicon. A desired monolithic integrated circuit is fabricated outside the tub periphery using conventional VLSI techniques. A photodiode electrode structure within the tub periphery can be fabricated at the same time as other monolithic circuit components are formed.

Silicon photodiode for monolithic integrated circuits

Silicon photodiode for monolithic integrated circuits and method for

It has been discovered that co-doping of Er-doped Si with a light element such as C, N or F can result in substantially increased Er luminescence. A further increase in luminescence can result if, in addition, oxygen is present in the Si. Apparatus or systems according to the invention comprise a device (e.g., laser, optical ampifier, LED) that comprises a planar waveguide whose core region contains, in addition to at least 90 atomic % Si or SiGe alloy, Er, Pr and/or Nd, and further contains C, N and/or F, and preferably also contains oxygen. Currently preferred apparatus or systems according to the invention comprise means for electrically pumping the waveguide means.

Optical waveguide system comprising a rare-earth Si-based optical device

The application describes a technique for passivating point defects that are characteristic of laser annealed semiconductors. According to the technique, the laser annealed material is treated with atomic hydrogen to electrically deactivate the defects.

Passivation of defects in laser annealed semiconductors

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Warren, NJ, United States of America

Janet L Benton