International Business Machines Corporation

Lockheed Martin Corporation

Jane M Shaw

Alfred Viehbeck

Marie Angelopoulos

Sampath Purushothaman

Michael Hatzakis

Jeffrey Donald Gelorme

Jeffrey Curtis Hedrick

Ali Afzali-ardakani

David Andrew Lewis

Edward D Babich

Ravi F Saraf

Niranjan Mohanlal Patel

David F Witman

Konstantinos I Papathomas

Teresita Ordonez Graham

George Frederick Walker

Vlasta A Brusic

Judith Marie Roldan

Steven E Molis

Jeffrey T Gotro

Claudius Feger

Janusz S Wilczynski

Fuad Elias Doany

Kevin J Stewart

Chandrasekhar Narayan

Terrence Robert O'Toole

Alessandro Cesare Callegari

Kang-Wook Lee

Stephan Alan Cohen

Elizabeth F Foster

Stephen L Tisdale

John J Ritsko

Rodney T Hodgson

Jurij R Paraszczak

Shahrokh Daijavad

Jungihl Kim

Ashit A Mehta

Evan Ezra Davidson

James L Hedrick, Jr

Bodil E Braren

Donis G Flagello

Juan Ayala-Esquilin

Eleftherios Adamopoulos

Wu-Song S Huang

Liam David Comerford

Stanley Joseph Whitehair

Richard D Kaplan

Tae Seok Oh

Andrew T Pomerene

Stanley E Perreault

Yun Hsin Liao

Michel R Tissier

Marie-Annick Le Corre

Vincent Albert Bourgault

Michael Wayne Mirre

Peter Joseph Spellane

Voya Rista Markovich

Ali Afzali-Ardakani

Katherine Lynn Saenger

Christopher Vincent Jahnes

Donald Seton Farquhar

Jerome J Cuomo

Naftali Eliahu Lustig

Harold John Hovel

Bruce Kenneth Furman

Martin J Goldberg

Mark David Poliks

Richard Anthony DiPietro

David Earle Seeger

John Patrick Hummel

Nancy C LaBianca

Modest M Oprysko

Leena Paivikki Buchwalter

Douglas Andrew Buchanan

Alina Deutsch

Steve Harris Weingart

Scott L Jacobs

Sharon L Nunes

Jack A Dickerson

Richard P McGouey

Donald J Hunt

Gnanalingam Arjavalingam

Douglas C Latulipe, Jr

Keith E Fogel

Tak H Ning

Paul Michael Solomon

Gareth Geoffrey Hougham

Brian Samuel Beaman

Lawrence Jacobowitz

Christos Dimitrios Dimitrakopoulos

Sung Kwon Kang

Subhash Laxman Shinde

Cherie Renee Kagan

Donald G McBride

Karl J Puttlitz, Sr

Raul E Acosta

Kurt R Kimmel

Juan R Maldonado

John J Liutkus

Karl Joseph Puttlitz

This invention is concerned with an electrically conductive polymer blend composition which is a liquid compatible blend, comprising a doped product formed form blending a first solution comprising a Lewis base electrically conductive polymer in undoped form in a first organic solvent with a second solution comprising a Lewis acid polymer dopant in a second organic solvent, wherein said Lewis acid polymer dopant dopes said Lewis base electrically conductive polymer in undoped form to obtain said electrically conductive polymer blend, the resulting doped conductive product being soluble in the combination of said first and said second organic solvents and mixable at the molecular level.

Electrically conductive polymeric materials and use thereof

A structure and method for forming a tamper respondent electronic circuit enclosure that includes an integrated circuit structure, a mesh structure surrounding the integrated circuit structure, and a sealed enclosure surrounding the mesh structure. The mesh structure includes a layer of flexible dielectric having a first side and a second side, a screen-printed pattern of flexible electrically conductive first circuit lines forming a first resistor network on the first side, and a photo lithographically-formed pattern of flexible electrically conductive second circuit lines forming a second resistor network on the second side.

Tamper-responding encapsulated enclosure having flexible protective mesh structure

Electrically conductive and abrasion resistant polymeric compositions, methods of fabrication thereof and uses thereof are described. Admixtures of abrasion resistant materials and electrically conductive polymeric materials are formed. Many of these admixtures arc light transmitting and can be used as an abrasion resistant light transmitting electrostatic discharge layers. The light transmitting discharge layer is useful as a surface coating for visual displays such as CRT screens to avoid electrostatic accumulation of dust and scratching. The compositions can be admixtures of abrasion resistant silicones, polysiloxanes, acrylates, epoxies, methacrylates, epoxyacrylates, epoxymethacrylates, styrenes and electrically conductive polymers selected from the group of substituted and unsubstituted polyanilines, polyparaphenylenevinyles, substituted and unsubstituted polythiophenes substituted and unsubstituted poly-p-phenylene sulfides, substituted and unsubstituted polyfuranes, substituted and unsubstituted polypyrroles, substituted and unsubstituted polyselenophenes, polyacetylines formed from soluble precursors, combinations thereof and blends thereof with other polymers. The compositions can be a layer or an electrically conductive polymer with an abrasion resistant layer thereover.

Electrically conductive and abrasion/scratch resistant polymeric materials, method of fabrication thereof and uses thereof

An interlayer dielectric for preventing Cu ion migration in semiconductor structure containing a Cu region is provided. The interlayer dielectric of the present invention comprises a dielectric material that has a dielectric constant of 3.0 or less and an additive which is highly-capable of binding Cu ions, yet is soluble in the dielectric material. The presence of the additive in the low k dielectric allows for the elimination of conventional inorganic barrier materials such as SiO or Si N .

Low k dielectric materials with inherent copper ion migration barrier

The present invention includes a multilevel air-gap-containing interconnect wiring structure including: a collection of interspersed line levels and via levels, the via levels and line levels containing conductive via and line features embedded in a dielectric having an air-gap and solid dielectric. The air-gap and solid dielectric includes (i) one or more solid dielectrics only in the shadows of the conductive features in overlying levels and (ii) a gaseous dielectric elsewhere in the structure. The collection of line levels and via levels are topped by a laminated thin, taut insulating cover layer having openings to selected conductive features in the topmost underlying line or via layer, and the openings are filled with conductive material connecting to terminal pad contacts on the insulating cover layer.

Chip interconnect wiring structure with low dielectric constant insulator and methods for fabricating the same

Active devices that have either a thread or a ribbon geometry. The thread geometry includes single thread active devices and multiple thread devices. Single thread devices have a central core that may contain different materials depending upon whether the active device is responsive to electrical, light, mechanical, heat, or chemical energy. Single thread active devices include FETs, electro-optical devices, stress transducers, and the like. The active devices include a semiconductor body that for the single thread devices is a layer about the core of the thread. For the multiple thread devices, the semiconductor body is either a layer on one or more of the threads or an elongated body disposed between two of the threads. For example, a FET is formed of three threads, one of which carries a gate insulator layer and a semiconductor layer and the other two of which are electrically conductive and serve as the source and drain. The substrates or threads are preferably flexible and can be formed in a fabric.

Active devices using threads

Cross-linked electrically conductive polymers, in particular electrically conductive, polyaniline are described. Dopants and substituents having pendant cross-linkable functionality are used which form a cross-linked conducting polymer network. The cross-linking functionality can be hydrogen-bonding as well as chemically polymerizable or cross-linkable. A conjugated path between chains can also be incorporated. The resulting cross-linked conducting polymers have enhanced thermal and environmental stability. The dopant cannot readily be washed out with solvents or diffuse out upon exposure to heat. In addition, the cross-linked polymers have enhanced electrical conductivity.

Methods of fabrication of cross-linked electrically conductive polymers and precursors thereof

A three dimensional packaging architecture for ultimate high performance computers and methods for fabricating thereof are described. The packgage allows very dense packaging of multiple integrated circuit chips for minimum communication distances and maximum clock speeds of the computer. The packaging structure is formed from a plurality of subassemblies. Each subassembly is formed from a substrate which has on at least one side thereof at least one integrated circuit device. Between adjacent subassemblies there is disposed a second substrate. There are electrical interconnection means to electrically interconnect contact locations on the subassembly to contact locations on the second substrate. The electrical interconnection means can be solder mounds, wire bonds and the like. The first substrate provides electrical signal intercommunication between the electronic devices and each subassembly. The second substrate provides ground and power distribution to the plurality of subassemblies. Optionally, the outer surfaces of the structure that can be disposed a cube of memory chips.

Three dimensional package and architecture for high performance computer

Cross-linked electrically conductive polymers, precursors thereof

A method to achieve a very low effective dielectric constant in high performance back end of the line chip interconnect wiring and the resulting multilayer structure are disclosed. The process involves fabricating the multilayer interconnect wiring structure by methods and materials currently known in the state of the art of semiconductor processing; removing the intralevel dielectric between the adjacent metal features by a suitable etching process; applying a thin passivation coating over the exposed etched structure; annealing the etched structure to remove plasma damage; laminating an insulating cover layer to the top surface of the passivated metal features; optionally depositing an insulating environmental barrier layer on top of the cover layer; etching vias in the environmental barrier layer, cover layer and the thin passivation layer for terminal pad contacts; and completing the device by fabricating terminal input/output pads. The method obviates issues such as processability and thermal stability associated with low dielectric constant materials by avoiding their use. Since air, which has the lowest dielectric constant, is used as the intralevel dielectric the structure created by this method would possess a very low capacitance and hence fast propagation speeds. Such structure is ideally suitable for high density interconnects required in high performance microelectronic device chips.

The present invention relates to electrically conductive polymer blend compositions comprising a non-conducting polymeric component and an electrically conducting polymeric component and specific applications to which the blend compositions can be put.

A polymer blend composition, capable of being made electrically conductive by application of heat having an electrically conductive upon doping polymer in undoped form; the undoped polymer is selected from the group consisting of substituted and unsubstituted polyparaphenylenevinylenes, polyanilines, polyazines, polythiophenes, poly-p-phenylene sulfides, polyfuranes, polyselenophenes, polyacetylenes filtered from soluble precursors and combinations and blends thereof, compounded and blended at a molecular scale with a dielectric polymer; wherein the dielectric polymer is selected from the group consisting of interpolymers of acrylonitrile-butadiene-styrene, acetal acrylic liquid crystal polymers, polybutylene terephthalate, polycarbonate, polyester, polyetherimide, polyethersulfone, polyethylene, polyethylene terephthalate, polyphenylene oxide, polyphenylene sulfide, polypropylene, polystyrene, polyurethane, polyvinychloride, styrene-acrylonitrile copolymer, fluoropolymers, nylon polyesters, and thermoplastic elastomers, and a thermally deblockable dopant selected from the group consisting of triflates, tosylates and borates, the electrically conductive upon doping polymer having enhanced solubility in undoped form with said dielectric polymer to form a compatible molecularly mixed blend in solution; doping of the polymer occurs only after exposure to heat.

The present invention is directed to vibrational methods of fabricating electrically conducting polymers and precursors thereof in which the polymer chains are deaggregated. Such deaggregated conducting polymers and precursors thereof exhibit better solution processability and higher electrical conductivity than do the corresponding aggregated polymers. The polymers in the non-doped precursor form or in the conducting form in solution or during the polymerization process are exposed to ultrasound and shear mixing. Due to this treatment, the chains become deaggregated. Furthermore, ultrasound and shear mixing is used during the doping of the precursor polymers. This treatment allows more uniform doping, enhanced solubility, and higher electrical conductivity. The solutions treated with ultrasound/shear mixing are subsequently processed into a structural part, a film, or a fiber.

Vibrational methods of deaggregation of electrically conductive polymers

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Ridgefield, CT, United States of America

Jane M Shaw