Northrop Grumman Systems Corporation

Northrop Grumman Space & Mission Systems Corporation

USA As Represented by Secretary of the Navy

Jane Lee

John Bradley Boos

Nicolas A Papanicolaou

Po-Hsin Liu

Jeffrey Ming-Jer Yang

Yeong-Chang Chou

Jay D Crawford

Weidong Liu

Wayne Yoshida

Jennifer Wang

Linh Dang

Michael Edward Barsky

Richard Lai

Xiaobing Mei

Mike Barsky

Gerry Mei

Rich Lai

An apparatus in one example comprises an antimonide-based compound semiconductor (ABCS) stack, an upper barrier layer formed on the ABCS stack, and a gate stack formed on the upper barrier layer. The upper barrier layer comprises indium, aluminum, and arsenic. The gate stack comprises a base layer of titanium and tungsten formed on the upper barrier layer.

Antimonide-based compound semiconductor with titanium tungsten stack

In a method of forming a semiconductor device on a semiconductor substrate (), a photoresist layer () is deposited on the semiconductor substrate; a window () is formed in the photoresist layer () by electron beam lithography; a conformal layer () is deposited on the photoresist layer () and in the window (); and substantially all of the conformal layer () is selectively removed from the photoresist layer () and a bottom portion of the window to form dielectric sidewalls () in the window ().

High electron mobility transistor semiconductor device and fabrication method thereof

Growing community of inventors

Torrance, CA, United States of America

Jane Lee