Infineon Technologies Ag

J&uuml;rgen Amon

Albrecht Kieslich

A method for fabricating a microelectronic structure includes implanting nitrogen into a semiconductor substrate which is provided with trenches, at least in the region of a main area of the semiconductor substrate. The implantation is intended to be carried out in such a way that a nitrogen concentration at the main area is considerably greater than at the side walls of the trenches. As a result, during subsequent oxidation of the semiconductor substrate, a thinner oxide layer can be formed on the main area, in comparison with the side walls. The oxide layer has a homogeneous transition in the edge region between the main area and the side walls. Implanting nitrogen prior to the oxidation of the semiconductor substrate leads to a uniform oxide layer thickness on the main area.

Growing community of inventors

Dresden, Germany

Jürgen Amon

Growing community of inventors

Dresden, Germany

J&uuml;rgen Amon

Jürgen Amon