Osram Oled Gmbh

Osram Oledgmbh

Jana Sommerfeld

Martin Rudolf Behringer

Albrecht Kieslich

Markus Broell

Christian Rumbolz

Michael Huber

Bernd Boehm

Brendan Holland

Georg Rossbach

Sebastian Hoibl

Sabine Vom Dorp

Martin Herz

The invention relates to a method for producing an optoelectronic semiconductor chip comprising the following steps: providing a semiconductor body () having a radiation-permeable surface (), and introducing structures () into the semiconductor body () on the radiation-permeable surface (), wherein the structures () are quasi-regular.

Method for producing an optoelectronic semiconductor chip having structures at the radiation passage surface, and optoelectronic semiconductor chip having structures at the radiation passage surface

A method for producing an electrical contact on a semiconductor layer and a semiconductor component having an electrical contact are disclosed. In an embodiment a method includes providing a semiconductor layer, forming a plurality of contact rods on the semiconductor layer, wherein the contact rods are formed by a first material and a second material, wherein the first material is applied to the semiconductor layer and the second material is applied to the first material, and wherein a lateral structure of the first material is self-organized, forming a filling layer on the contact rods and in intermediate spaces between the contact rods and exposing the contact rods.

Method for establishing electrical contact of a semiconductor layer and semiconductor component having electrical contact

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Wuppertal, Germany

Jana Sommerfeld