Advanced Micro Devices Corporation

Globalfoundries Inc.

Jana Schlott

Peter Baars

Ralf Richter

Kai Frohberg

Joerg Hohage

Frank Jakubowski

Jens Heinrich

Marco Lepper

Michael Finken

When forming substrate diodes in SOI devices, superior diode characteristics may be preserved by providing an additional spacer element in the substrate opening and/or by using a superior contact patterning regime on the basis of a sacrificial fill material. In both cases, integrity of a metal silicide in the substrate diode may be preserved, thereby avoiding undue deviations from the desired ideal diode characteristics. In some illustrative embodiments, the superior diode characteristics may be achieved without requiring any additional lithography step.

SOI semiconductor device comprising a substrate diode with reduced metal silicide leakage

A method of forming a semiconductor structure comprises providing a semiconductor substrate comprising at least one transistor element. An etch stop layer is formed over the transistor element. A stressed first dielectric layer is formed over the etch stop layer. A protective layer adapted to reduce an intrusion of moisture into the first dielectric layer is formed over the first dielectric layer. At least one electrical connection to the transistor element is formed. At least a portion of the protective layer remains over the first dielectric layer after completion of the formation of the at least one electrical connection.

Method of forming a semiconductor structure comprising a field effect transistor having a stressed channel region

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Wachau, Germany

Jana Schlott