Infineon Technologies Ag

Jana Hänsel

Frank Dieter Pfirsch

Roman Baburske

Matthias Rudolph

Katja Waschneck

A semiconductor switching module includes an insulated gate bipolar transistor and a unipolar switching device. The insulated gate bipolar transistor includes a first transistor cell and a supplemental cell, wherein the first transistor cell includes a first gate and a first source and wherein the supplemental cell includes a second gate and a supplemental electrode. The unipolar switching device is based on a wide bandgap material and includes a third gate and a third source. The third gate and the second gate are electrically connected with each other and are disconnected from the first gate. The first source, the supplemental cell and the third source are electrically connected with each other.

Semiconductor switching module with insulated gate bipolar transistor and unipolar switching device

The present invention provides a fabrication method for a semiconductor structure having a partly filled trench, having the following steps: provision of a semiconductor structure () having a trench (); filling of the trench () with a filling () in such a way that the filling () projects above a surface (OF) of the semiconductor structure () by a first height (h1), the filling () covering the trench () and the periphery () of the trench (); planarization of the filling () in a first etching step in such a way that the filling () is essentially planar with the surface (OF) of the semiconductor structure (); and sinking of the filling () in the trench () in a second etching step by a predetermined depth (T) proceeding from the surface of the semiconductor structure (); essentially the same plasma power and the same etchant composition being used for the first and second etching steps.

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Dresden, Germany

Jana Hänsel