Koninklijke Philips Corporation N.v.

U.S. Philips Corporation

Asml Netherlands B.v.

Asml Holding N.v.

Carl-zeiss-smt Ag

Jan Willem Verhoeven

Johannes Willem Hofstraat

Marijn Goes

Nicolaas Ten Kate

Joost Wilhelmus Maria Frenken

Thomas Poiesz

Frederik Bijkerk

Josephus J M Braat

Andrey E Yakshin

Eric Louis

Mehmet Ali Akbas

Satish Achanta

Evelyn Wallis Pacitti

Bruce Tirri

Jeroen Bouwknegt

Olivier Christian Maurice Lugier

Sonia Castellanos Ortega

Sebastian Oestreich

Pavlo Antonov

Lambertus Gerhardus Albertus Michael Alink

Robbert Wilhelmus Elisabeth Van De Kruijs

Martinus Henricus Valentinus Werts

Dirk K G De Boer

Adriaan Tip

Boris Lastdrager

Rutger Schlatmann

Anton Keppel

Peter Cornelis Görts

Methods and apparatus for forming a patterned layer of carbon are disclosed. In one arrangement, a selected portion of a surface of a solid structure is irradiated with extreme ultraviolet radiation in the presence of a carbon-containing precursor. The radiation interacts with the solid structure in the selected portion to cause formation of a layer of carbon in the selected portion from the carbon-containing precursor. The layer of carbon is formed in a pattern defined by the selected portion.

Method and apparatus for forming a patterned layer of carbon, method of forming a patterned layer of material

There is disclosed a substrate holder, a method of manufacturing a substrate holder, a lithographic apparatus comprising the substrate holder, and a method of manufacturing devices using the lithographic apparatus. In one arrangement, there is provided a substrate holder for use in a lithographic apparatus. The substrate holder supports a substrate. The substrate holder comprises a main body. The main body has a main body surface. A plurality of burls are provided projecting from the main body surface. Each burl has a burl side surface and a distal end surface. The distal end surface of each burl engages with the substrate. The distal end surfaces of the burls substantially conform to a support plane and support the substrate. A layer of carbon based material is provided in a plurality of separated regions of carbon based material. The layer of carbon based material provides a surface with a lower coefficient of friction than a part of the main body surface outside the plurality of separated regions of carbon based material. The layer of carbon based material covers only part of the distal end surface of at least one of the burls. Alternatively, the layer of carbon based material covers the distal end surface and at least a portion of the burl side surface of at least one of the burls.

Substrate holder and a method of manufacturing a substrate holder

A multilayer system and its production. Multilayer systems, such as those used as mirrors in the extreme ultraviolet wavelength range, suffer contamination or oxidation during storage in air and in long-time operation, i.e. when exposed to EUV radiation in a vacuum environment with certain partial pressures of water or oxygen, which causes a serious reduction in reflectivity. The multilayer system according to the invention will have a long life with constantly high reflectivity. Their reflectivity can be enhanced by barrier layers. The multilayer systems according to the invention have protective layers comprising iridium. The multilayer systems according to the invention are produced by direct, ion-beam-supported growth of the respective layer. The multilayer systems according to the invention are not only resistant to contamination and oxidation, but can also be cleaned if necessary, without losing reflectivity. Because of their long life with constantly high reflectivity, they are particularly suitable for use in semiconductor lithography in the soft X-ray range or extreme ultraviolet wavelength range.

Multilayer system with protecting layer system and production method

The invention pertains to a non-fluorescent label which is suitable for making a charge-transfer fluorescent probe having a donor-bridge-acceptor structure, characterized in that the label comprises a maleimide moiety and the donor-bridge-acceptor structure, wherein the bridge is a group which leads to an all-trans orbital coupling of the donor and the acceptor, and the donor-bridge-acceptor structure has a higher energy charge-transfer emissive state than at least one non-emissive state of part of the label comprising the maleimide moiety, which non-emissive state must have a higher energy than the charge-transfer emissive state of the donor-bridge-acceptor structure after coupling of the maleimide moiety to a suitable system.

Label for making a charge-transfer fluorescent probe

A description is given of an electroluminescent device ( ) comprising an active layer ( ) of an organic charge-transfer compound having a donor-bridge-acceptor structure in a polymer matrix. A blue emitting EL device may be formed having a high electroluminescent intensity and increased stability.

Electroluminescent device

Luminescent device containing a luminescent material comprising organic lanthanide complexes comprising organic ligands of which at least one organic ligand is an aromatic ketone comprising a substituted electron donor group. This material has improved luminescence properties, and may be used in electroluminescent devices.

Luminescent device

An electroluminescent device ( ) comprising an active layer ( ) of an organic charge-transfer compound having a donor-bridge-acceptor structure in a polymer matrix. A blue emitting EL device may be formed having a high electroluminescent intensity and increased stability.

An EUV illumination system comprises an EUV radiation source unit ( ) and at least one EUV radiation-reflecting mirror ( ), which mirror comprises a multilayer structure of first layers ( ) of a first material alternating with second layers ( ) of a second material, and which radiation source unit comprises an electron source ( ) for supplying an electron beam (EB) and a medium ( ) which converts the electron beam into a beam of photons (IB). As the medium ( ) comprises at least one material that is equal to one of the materials of the mirror multilayer structure, the photon beam (IB) has a relatively large intensity.

EUV illumination system

An EUV radiation source unit (,) for use in a lithographic projection apparatus to illuminate a mask pattern (,) which is to be projected on a substrate (W) comprises an electron source (,) and a medium in which the electrons of the source generate EUV Cherenkov radiation (PB). The wavelengths of the Cherenkov radiation and the multilayer structure of the mirrors (,) of the projection system (,) are adapted to each other, so that these mirrors show a maximum reflectivity. The medium forms part of the mask (MA) so that a mirror condenser system is no longer needed. In this way, an efficient transmission of radiation (PB) from the source to the substrate is obtained.

Method of imaging a mask pattern on a substrate by means of EUV radiation, and apparatus and mask for performing the method

A method of manufacturing multilayer mirrors for use in conjunction with X-rays. Customary multilayer mirrors are composed of discrete, thin layers which generally consist of alternating absorption and spacer layers. In order to counteract surface roughness of the thin layers, it is known to smoothen the layers by ion etching after deposition. A drawback thereof consists in that the material of one layer penetrates into the other layer, so that the location of the interface and the thickness of the layers of the multilayer mirror are no longer suitably defined. In accordance with the invention, a multilayer mirror is manufactured by stimulating the penetration of one of the materials into the layer with the other material, after which the original layer thickness of the first material is removed by etching. By repeating this process one layer after the other, a multilayer mirror is obtained which does not consist of an alternation of uniform, discrete layers of a different material but of recurrent layers of one of the materials in which the other material has penetrated.

Multilayer mirror with a variable refractive index

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Koog aan de Zaan, Netherlands

Jan Willem Verhoeven