Asm IP Holding B.v.

Asm International N.v.

Jan Willem Hub Maes

Suvi P Haukka

Ivo Johannes Raaijmakers

Eva E Tois

Delphine Longrie

Shaoren Deng

Andrea Illiberi

VamsI Paruchuri

Viljami J Pore

Michael Eugene Givens

Eric James Shero

Marko J Tuominen

Christophe F Pomarede

Michael Givens

Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.

Selective passivation and selective deposition

The present invention relates to methods for forming dielectric layers on a substrate, such as in an integrated circuit. In one aspect of the invention, a thin interfacial layer is formed. The interfacial layer is preferably an oxide layer and a high-k material is preferably deposited on the interfacial layer by a process that does not cause substantial further growth of the interfacial layer. For example, water vapor may be used as an oxidant source during high-k deposition at less than or equal to about 300&deg; C.

Low temperature method of forming a gate stack with a high k layer deposited over an interfacial oxide layer

Growing community of inventors

Wilrijk, Belgium

Jan Willem Hub Maes