Instytut Wysokich Cisnien Polskiej Akademii Nauk

Instytut Chemi Fizycznej Polskiel Akademii Nauk

Centrum Badan Wysokocisnieniowych Pan

Instytut Chemii Fizycznej Polskiejakademii Nauk

Jan Weyher

Sylwester Porowski

Tadeusz Suski

Izabella Grzegory

Igor Dziecielewski

Robert Holyst

Agnieszka Kaminska

Grzegorz Nowak

The invention relates to a substrate for surface enhanced Raman scattering studies comprising a semiconductor surface with whiskers, coated with metal selected from the group consisting of silver, gold, platinum, copper and/or alloys thereof, where the semiconductor mentioned is a gallium-containing nitride and essentially each whisker contains a linear defect inside.

Substrate for surface enhanced raman scattering studies

This method of removal of irregularities and highly defected regions of the surface of crystals and epitaxial layers of GaN and Ga Al In N characterized by mechano-chemical polishing on the soft polishing pad under pressure in presence of chemical etching agent of water solution of bases of the total concentration above 0.01N in time longer than 10 seconds after which the agent is replaced by the pure water without interruption of the polishing and polishing by at least 1 minute aid subsequent diminution of the load and stopping of the machine and then the polished GaN crystal or GaAlInN epitaxial layer is removed of the polishing machine and dried in the stream of dry nitrogen.

Mechano-chemical polishing of crystals and epitaxial layers of GaN and Ga1-x-yA1xInyN

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Warsaw, Poland

Jan Weyher