Hitachi Energy Ltd

Asea Brown Boveri Ag

Hitachi Energy Switzerland Ag

Jan Vobecky

Florin Udrea

Chiara Corvasce

David Guillon

Umamaheswara Vemulapati

Thomas Stiasny

Ying-Jiang Hafner

Norbert Galster

Jagoda Dobrzynska

Marina Antoniou

Neophytos Lophitis

Pavel Hazdra

Tobias Mats Olof WIKSTRÖM

A bidirectional thyristor device () comprising a semiconductor body () extending between a first main surface () and a second main surface (), is provided wherein a first main electrode () and a first gate electrode () are arranged on the first main surface and a second main electrode () and a second gate electrode () are arranged on the second main surface. The first main electrode comprises a plurality of first segments () that are spaced apart from one another, wherein at least some of the first segments are completely surrounded by the first gate electrode in a view onto the first main surface. The second main electrode comprises a plurality of second segments () that are spaced apart from one another, wherein at least some of the second segments are completely surrounded by the second gate electrode in a view onto the second main surface.

Bidirectional thyristor device

A module () is specified, the module () comprising a first module connection (), a second module connection (), an energy store (), a first electrical switch () and a second electrical switch (), wherein a switchable bypass device () is arranged between the first module connection () and the second module connection () and wherein the switchable bypass device () is configured to remain in a bidirectional current conducting state in response to a single trigger pulse.

Module comprising a switchable bypass device

Bidirectional thyristor device comprising a semiconductor body extending in a vertical direction between a first main surface and a second main surface opposite the first main surface, a first main electrode arranged on the first main surface, and a second main electrode arranged on the second main surface, is specified, wherein the semiconductor body comprises a first base layer of a first conductivity type, a second base layer of the first conductivity type, and a third base layer of a second conductivity type different than the first conductivity type arranged between the first base layer and the second base layer. The first main electrode acts as a cathode for a first thyristor functional element and as an anode for a second thyristor functional element of the bidirectional thyristor device. The bidirectional thyristor device is configured asymmetrically with respect to the first thyristor functional element and the second thyristor functional element.

Bidirectional thyristor device with asymmetric characteristics

In a process for adjusting the carrier lifetime in a semiconductor component (1) by means of particle irradiation (P), at least two defect regions (10, 11, 12, 13) are produced in the semiconductor component (1). In this process, a particle beam (P), consisting of particles (a, b, c, d) with at least approximately the same initial energy, is acted on by at least one means (2), before reaching the semiconductor component (1), in such a way that the particles (a, b, c, d) subsequently have different energy values, at least two energy value groups being distinguishable. It is thereby possible, with a single particle irradiation operation, to produce an arbitrary number of defect regions whose arrangement and weighting is arbitrarily selectable.

Process for adjusting the carrier lifetime in a semiconductor component

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Prague, Czechia

Jan Vobecky