Carl Zeiss Smt Gmbh

Asml Netherlands B.v.

Jan Van Schoot

Erik Roelof Loopstra

Vadim Yevgenyevich Banine

Markus Hauf

Timotheus Franciscus Sengers

Christian Wagner

Ramon Pascal Van Gorkom

Andrei Mikhailovich Yakunin

Ulrich Loering

Stefan Hembacher

Edwin Johan Buis

Gosse Charles De Vries

Wilhelmus Petrus De Boeij

Timo Laufer

Guido Limbach

Holger Walter

Hako Botma

Franz-Josef Stickel

Oliver Natt

Christiaan Louis Valentin

Norman Baer

Koen Van Ingen Schenau

Yim-Bun-Patrick Kwan

Erik Maria Rekkers

Gero Wittich

Peter Kuerz

Hermanus Kreuwel

Gerardus Swinkels

Tian Gang

Antonius Van Dijsseldonk

Antonius Kempen

Gerardus Hubertus Swinkels

Sven Hol

Marinus Van Dam

An illumination optical system for projection lithography includes a pupil facet mirror having pupil facets. For at least some of the pupil facets which are designed as selectively reflecting pupil facets, the selectively reflecting pupil facet has a reflective coating for the illumination light, wherein a first coating area on a first part of the selectively reflecting pupil facet has a first reflectivity, a second coating area on a second part of the selectively reflecting pupil facet has a second reflectivity, the first coating area is different from the second coating area, and the first reflectivity is different from the second reflectivity. In combination or as an alternative, for at least some of the pupil facets which are designed as broadbands reflecting pupil facets, the broadband reflecting facets have a broadband reflective coating for the illumination light.

Illumination optical system for projection lithography

A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

EUV exposure apparatus with reflective elements having reduced influence of temperature variation

Growing community of inventors

Eindhoven, Netherlands

Jan Van Schoot