University of Pennsylvania

Texas Instruments Corporation

Trustees of the Univ. of Penna.

Integrated Ionics, Inc.

Jan Van Der Spiegel

Viktor Gruev

Zheng Yang

Nader Engheta

Krishnasawamy Nagaraj

Imants R Lauks

Paul H Mueller

Sameer Sonkusale

Antinino Fiorillo

A CMOS image sensor that is capable of both voltage- and current-mode operations selects the mode based on the position of mode switches. Each pixel on the imager has a single transistor acting as either source follower for voltage readout, or transconductor for current readout. The two modes share the same readout lines, but have their own correlated double sampling (CDS) units for noise suppression. A current-mode readout technique using a velocity-saturated short-channel transistor may be used to achieve high linearity. An image array may be formed as a mixture of 3 types of pixels with identical photodiodes and access switches. The readout transistors are optimally sized for their designated mode of operation. Alternatively, two readout transistors are provided per pixel, each individually optimized for the desired mode of operation.

CMOS linear voltage/current dual-mode imager

A voltage and current mode active pixel sensor for high resolution imaging is presented. The photo pixel is composed of a photodiode and two transistors: reset and transconductance amplifier transistor. The switch transistor is moved outside the pixel, allowing for lower pixel pitch and increased linearity of the output photocurrent. The reset and amplifier (readout) transistors may also be shared among adjacent pixels by the introduction of transfer switches between the photodiodes and the source of the reset transistor and the gate of the readout transistor. The switch transistor outside the pixels provides biasing voltages or currents to the readout transistors to selectively turn them on when readout of the corresponding photodiode is desired and turns the readout transistor off when the corresponding photodiode is not to be read out. The increased linearity of the image sensor has greatly reduced spatial variations across the image after correlated double sampling and the column fix pattern noise is greatly improved.

Current/voltage mode image sensor with switchless active pixels

A polarimetric imaging system employs a pixel pitch matched filter for use within, for example, a 2 by 2 pixel neighborhood, in which one pixel samples the scene via a 0 degree polarization filter and a second pixel samples the scene via a 45 degree polarization filter. The remaining two pixels record the intensity of the light within the 2 by 2 neighborhoods. The polarization filters employ organic materials such as polymers or metallic materials that are patterned and etched using reactive ion etching (RIE) or other appropriate etching technique in order to create 14 micron or smaller circular (or square) periodic structures that are patterned into polarization thin films that are deposited on an imaging sensor that includes a processor that computes from the polarization-filtered inputs the first three Stokes parameters in real-time.

Sensor and polarimetric filters for real-time extraction of polarimetric information at the focal plane

Systems and methods are provided for performing a background calibration technique on one or more stages of a pipeline Analog-to-Digital Converter (ADC). The systems and methods employs a slow but accurate analog-to-digital converter or a slow but accurate ideal pipeline stage to correct for the residue errors in a non-ideal pipeline stage using an error function and a correction algorithm. The correction algorithm determines optimal parameters of the error function, so that the error function can be utilized to compensate for errors in the ADC. The correction algorithm and results can be applied in the digital domain or in the analog domain.

True background calibration of pipelined analog digital converters

A method of manufacturing ferroelectric sensors having piezoelectric and pyroelectric properties are provided. These sensors include a semiconductor transistor having a gate and a surface layered with an integral film comprising a substantially poled ferroelectric polymer. The integral film is electrically connected to ground or a voltage source and to the gate of the semiconductor transistor. The preferred integral film is deposited on the semiconductor transistor using spin coating techniques. Extremely sensitive acoustic imaging sensors and the like can be produced in accordance with the invention which have high voltage sensitivity and better acoustic impedance match with body tissues and water.

Method of manufacturing ferroelectric MOSFET sensors

A general purpose programmable neural computer which parallel processes analog data. The neural computer comprises neural elements for outputting an analog signal in response to at least one input signal, synaptic circuits interfaced with the neural elements for modifying gains of the neural elements, and switching circuits interfaced with the synaptic circuits and the neural circuits for routing signals between the synapse circuits and the neural circuits and for modifying the synaptic time constants, thereby changing connection architecture of the general purpose analog computer as desired. In this manner, the neural computer of the invention can be programmed to learn different confirurations as well as different synaptic values.

General purpose neural computer

An ambient sensing device is described especially suited to the sensing of a variety of ambient parameters. Photolithographic techniques are used to pattern a multiplicity of sensitive layers on a single monolithic substrate taking into account the wide range of plastic, gelatinous and ceramic materials to be patterned and the problems of their cross-contamination when in contact.

Growing community of inventors

Philadelphia, PA, United States of America

Jan Van Der Spiegel