Asml Netherlands B.v.

Asml Holding N.v.

Jan Steven Christiaan Westerlaken

Johannes Henricus Wilhelmus Jacobs

Engelbertus Antonius Fransiscus Van Der Pasch

Thibault Simon Mathieu Laurent

Frank Johannes Jacobus Van Boxtel

Peter Paul Steijaert

Franciscus Van De Mast

Gerardus Arnoldus Hendricus Franciscus Janssen

Martinus Hendrikus Antonius Leenders

William Peter Van Drent

Sjoerd Nicolaas Lambertus Donders

Christiaan Alexander Hoogendam

Nicolaas Ten Kate

Raymond Wilhelmus Louis Lafarre

Martijn Houben

Antonius Franciscus Johannes De Groot

Adrianus Hendrik Koevoets

Christopher Charles Ward

Jim Vincent Overkamp

Günes Nakiboglu

Mark Josef Schuster

Menno Fien

Rob Johan Theodoor Rutten

Maarten Van Beijnum

Igor Vladimirovich Fomenkov

Alexander Igorevich Ershov

Johannes Hubertus Josephina Moors

Samir A Nayfeh

Haico Victor Kok

Ruud Hendrikus Martinus Johannes Bloks

Fei Liu

Yuri Johannes Gabriël Van De Vijver

Sander Catharina Reinier Derks

Antonius Theodorus Wilhelmus Kempen

Johannes Hubertus Antonius Van De Rijdt

Daniel Jozef Maria Direcks

Bastiaan Andreas Wilhelmus Hubertus Knarren

Andrew David LaForge

Yue Ma

Justin Matthew Verdirame

Allard Eelco Kooiker

Klaus Martin Hummler

Peter A Delmastro

Alexey Sergeevich Kuznetsov

Peter Gerardus Jonkers

Maurice Wilhelmus Leonardus Hendricus Feijts

Hendrikus Alphonsus Ludovicus Van Dijck

Hubertus Johannes Van De Wiel

Johannes Antonius Maria Van De Wal

Rui Miguel Duarte Rodrigues Nunes

Parham Yaghoobi

Jeroen Hubert Rommers

Johannes Pieter Kroes

Fernando Brizuela

Rob Carlo Wieggers

Umesh Prasad Gomes

Elena Nedanovska

Celal Korkmaz

Wilhelmina Margareta Jozef Hurkens-Mertens

Yohann Bruno Yvon Teillet

Alexander Downn Kim

Pieter Gerardus Mathijs Hoeijmakers

Katja Cornelia Joanna Clasina Moors

Violeta Navarro Paredes

Qiushi Zhu

Erik Roelof Loopstra

Koen Jacobus Johannes Maria Zaal

Johannes Onvlee

Marc Wilhelmus Maria Van Der Wijst

Ruud Antonius Catharina Maria Beerens

Laurentius Johannes Adrianus Van Bokhoven

Marcel Koenraad Marie Baggen

Robbert Jan Voogd

Koen Cuypers

Daniel Nathan Burbank

Marinus Jan Remie

Fransiscus Mathijs Jacobs

Robertus Nicodemus Jacobus Van Ballegoij

Jeroen Arnoldus Leonardus Johannes Raaymakers

Thomas Petrus Hendricus Warmerdam

Richard Henricus Adrianus Van Lieshout

Frank Pieter Albert Van Den Berkmortel

Patrick Johannes Cornelus Hendrik Smulders

Rob Jansen

Ivo Vanderhallen

Gerrit Van Der Straaten

Alexandrios Mathew

Maria Del Carmen Mercado

Kevin Nicolas Stephan Couteau

Rachid El Boubsi

Martijn Lambertus Peter Visser

Marcelo Henrique De Andrade Oliveira

Chattarbir Singh

Henricus Anita Jozef Wilhemus Van De Ven

José Nilton Fonseca Junior

Robbert-Jan Voogd

Erik Vervoort

Remco Johannes Elisa Heijmans

Maria Del Carmen Mercado Carmona

A radiation source for an EUV lithography apparatus is disclosed. The radiation source comprises a chamber comprising a plasma formation region, a radiation collector arranged in the chamber and configured to collect radiation emitted at the plasma formation region and to direct the collected radiation towards an intermediate focus region, and a radiation conduit disposed between the radiation collector and the intermediate focus region. The radiation conduit comprises at least one outlet on an inner surface of a wall of the radiation conduit for directing a protective gas flow, and at least one guide portion extending from the inner surface of the wall of the radiation conduit and configured to redirect the protective gas flow. Also disclosed is a method of reducing debris and/or vapor deposition in the radiation conduit by providing a protective gas flow to the at least one outlet of the radiation conduit.

Radiation conduit

A contamination trap for use in a debris mitigation system of a radiation source, the contamination trap comprising a plurality of vanes configured to trap fuel debris emitted from a plasma formation region of the radiation source; wherein at least one vane or each vane of the plurality of vanes comprises a material comprising a thermal conductivity above 30 W mK.

Contamination trap

Degradation of the reflectivity of one or more reflective optical elements in a system for generating EUV radiation is reduced by the controlled introduction of a gas into a vacuum chamber containing the optical element. The gas may be added to the flow of another gas such as hydrogen or alternated with the introduction of hydrogen radicals.

Prolonging optical element lifetime in an EUV lithography system

Degradation of the reflectivity of one or more reflective optical elements in a system (SO) for generating EUV radiation is reduced by the controlled introduction of a gas into a vacuum chamber () containing the optical element. The gas may be added to the flow of another gas such as hydrogen or alternated with the introduction of hydrogen radicals.

A lithographic apparatus has a support structure configured to support a patterning device, the patterning device serving to pattern a radiation beam according to a desired pattern and having a planar main surface through which the radiation beam passes; an outlet opening configured to direct a flow of a gas onto the patterning device; and an inlet opening configured to extract the gas which has exited the outlet opening, wherein the outlet opening and inlet opening are in a facing surface facing the planar main surface of the patterning device.

Lithographic apparatus

A support apparatus for a lithographic apparatus has an object holder and an extraction body radially outward of the object holder. The object holder is configured to support an object. The extraction body includes an extraction opening configured to extract fluid from a top surface of the support apparatus. The extraction body is spaced from the object holder such that the extraction body is substantially decoupled from the object holder. The extraction body comprises a projection configured such that it surrounds the object holder and such that, in use, a layer of liquid is retained on the projection and in contact with an object supported on the object holder.

Support apparatus, lithographic apparatus and device manufacturing method

A lithographic apparatus having a first outlet to provide a thermally conditioned fluid with a first flow characteristic to at least part of a sensor beam path, and a second outlet associated with the first outlet and to provide a thermally conditioned fluid with a second flow characteristic, different to the first flow characteristic, adjacent the thermally conditioned fluid from the first outlet.

Lithographic apparatus and device manufacturing method

A lithographic apparatus including: a projection system to project radiation onto a substrate supported on a substrate stage, during an exposure phase; a sensing system to sense a property of the substrate on the stage during a sensing phase; and a positioning system to determine a position of the stage relative to a reference system via a radiation path between the stage and the reference system, wherein the apparatus is configured to control stage movement relative to the reference system in the sensing phase and to control other movement relative to the reference system during the exposure phase; the stage or reference system having an outlet to provide a gas curtain to reduce ingress of ambient gas into the path; and the apparatus is operative such that a characteristic of the gas curtain is different in at least part of the sensing phase compared to in the exposure phase.

A measurement system for a lithographic apparatus includes a sub-frame compliantly mounted on a reference frame. A measurement device, e.g. an alignment sensor, is mounted on the sub-frame. Soft mounting of the sub-frame isolates the alignment sensor from high-frequency disturbances, e.g. acoustic noise, by acting as a low-pass filter with a cut-off frequency, e.g. in the range of from 100 to 200 Hz.

Lithographic apparatus, and device manufacturing method

A thermal conditioning unit to thermally condition a substrate in a lithographic apparatus, the thermal conditioning unit including: a thermal conditioning element having a first layer, in use, facing the substrate and including a material having a thermal conductivity of 100 W/mK or more, a second layer and a heat transfer component positioned between the first and second layers; and a stiffening member which is stiffer than the thermal conditioning element and configured to support the thermal conditioning element so as to reduce mechanical deformation thereof, wherein the thermal conditioning element is thermally isolated from the stiffening member.

Thermal conditioning unit, lithographic apparatus and device manufacturing method

A lithographic apparatus including: a projection system with an optical axis; an enclosure with an ambient gas; and a physical component accommodated in the enclosure, wherein: the lithographic apparatus is configured to cause the physical component to undergo movement relative to the enclosure, in a predetermined direction and in a plane perpendicular to the optical axis; the lithographic apparatus is configured to let the physical component maintain a predetermined orientation with respect to the enclosure during the movement; the movement induces a flow of the ambient gas relative to the component; the physical component has a surface oriented perpendicularly to the optical axis; the component includes a flow direction system configured to direct the flow of ambient gas away from the surface.

A conditioning system for a lithographic apparatus having a plurality of modules. The conditioning system includes a plurality of conditioning branches conveying a common conditioning medium for the plurality of modules, one conditioning branch for each module (or a subset of modules); a plurality of thermal actuators, each thermal actuator operable to locally alter the temperature of the common conditioning medium at one of the conditioning branches; and a plurality of sensors, each sensor operable to sense the temperature of the common conditioning medium at one of the conditioning branches.

Conditioning system and lithographic apparatus comprising a conditioning system

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Heesch, Netherlands

Jan Steven Christiaan Westerlaken